Fabrication of semiconductor nano-scale structures and control of its electrical characteristics by means of quantum doping

半导体纳米级结构的制造及其通过量子掺杂控制其电特性

基本信息

批准号：
09555102
负责人：
OHDOMARI Iwao
金额：
$ 8.26万
依托单位：
Waseda University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1997
资助国家：
日本
起止时间：
1997 至 1999
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09555102/
关键词：
Quantum doping Single ion implantation Impurity atom Dopant Semiconductor Focused ion beam Surface modification Nano structure 単一イオン抽出 2次電子検出不純物揺らぎドーパント個数制御 SIMOX基板異方性エッチングゆらぎ活性化 MOS界面準位

项目摘要

Trimming of the inherent fluctuation in electrical properties of a fine resistor which corresponds to an active region in semiconductor devices has been tried for the tirst time by implanting a small number of dopant atoms by means of single ion implantation (SII) which enables us to implant dopant ions one by one into a fine semiconductor region until the necessary number is reached. Firstly the conductance increase per one dopant atom in a sub-μm scale Si resistor was measured to be 18 nS/atom. Secondly very fine test resistors with a size of sub-μm were made by conventional device fabrication technology and the statistical distribution of conductance in the test devices was obtained. The initial conductance deviated considerably from the mean value, evaluated to be 63%. Finally based on the experimental increment of conductance per an ion, the number of single ions necessary to trim the conductance value into a certain value in the higher side of the initial conductance distribution … More was implanted to each test resistor. It was foud that the initial conductance fluctuation of 63% has been successfully reduced to only 13%. This result leads to the conclusion that the electrical properties in a fine semiconductor region can be controlled by implanting a necessary number of dopant atoms by SII in one-by-one manner. It was discovered that the value based on the analysis of various factors of fluctuation was larger than the experimental one, 13%. The reason for the large discrepancy was believed to be due to the overstimation of impurity position fluctuation in the specimens in which single ions were implanted at an interval of 0.3μm and the impurity position was not random in reality. We expect that a better correlation between impurity positions to be achieved by higher aiming precision of single ion incidence with SII would cause a smaller position fluctuation. This study clarifies an essential issue of controlling not only the impurity atom number but also their positions experimentally for the first time. Less

首次尝试通过单离子注入（SII）注入少量掺杂剂原子，来调整与半导体器件中有源区域相对应的精细电阻器的电特性的固有波动，这使我们能够注入掺杂剂离子一个接一个地进入精细半导体区域，直到达到必要的数量。首先，亚微米级硅电阻器中每一个掺杂剂原子的电导增加量为 18。其次，采用传统的器件制造技术制作了亚μm级的非常精细的测试电阻，并获得了测试器件中电导的统计分布，初始电导与平均值有很大偏差，经评估为63。最后，根据每个离子电导的实验增量，将电导值调整为初始电导分布较高侧的某个值所需的单个离子的数量被植入到每个测试电阻器中。结果发现，63%的初始电导波动已成功降低至仅13%，这一结果得出这样的结论：通过SII在单层中注入必要数量的掺杂剂原子可以控制精细半导体区域的电性能。通过对各种波动因素的分析发现，该值比实验值大13%，差异较大的原因被认为是由于高估了杂质位置波动。单个离子以 0.3μm 的间隔注入的样品实际上杂质位置不是随机的，我们期望通过 SII 的单个离子入射的更高瞄准精度来实现杂质位置之间更好的相关性，从而导致更小的杂质位置。这项研究首次阐明了不仅通过实验控制杂质原子数量而且还控制其位置的重要问题。