Room-temperature device application of one- dimensional-exciton photo-emission in quantum wires

一维激子光发射在量子线中的室温器件应用

基本信息

批准号：
09555094
负责人：
AKIYAMA Hidefumi
金额：
$ 7.42万
依托单位：
The University of Tokyo
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1997
资助国家：
日本
起止时间：
1997 至 1999
项目状态：
已结题

项目摘要

We have investigated the one-dimensional (1D) exciton effect from low up to room temperature and preventing factors in the physics and material point of view in order to achieve 1D GaAs quantum wire (QWR) photo-emission devices. For this purpose, we have developed microscopic photoluminescence (PL) imaging and spectroscopy system with high resolution and efficiency which is stable against temperature variation.Introduction of In GaAs material to T-shaped quantum wires was tried to stabilize the ID excitons. It turned out that the lateral confinement energy of QWR was increased to 35meV, which is about two times larger than 18meV observed for the corresponding GaAs T-QWRs. The temperature dependence of PL have shown that excitons are stable up to 150K in the sample. Introduction of AIAs barrier will further stabilize the ID excitons to make PL at room temperature.The major difficulty of T-QWRs lies in the MBE growth on the cleaved (110) crystal surface. We have investigated (110) MBE-grown surface of GaAs of atomic force microscopy and our microscopic PL imaging and spectroscopy system. The micrometer-scale large terrace formation inherent to (110) surface and the resulted modulated electronic states were observed, which contributes to the exciton diffusion and thermal activation processes at various temperatures.Ridge QWR lasers with low controllability but with inherently strong confinement have been also designed, fabricated, and characterized. They did lase at room temperature, on which we studied microscopic origin, temperature dependence, and uniformity.

我们研究了从低温到室温的一维（1D）激子效应以及物理和材料角度的阻碍因素，以实现一维砷化镓量子线（QWR）光电发射器件。为此，我们开发了具有高分辨率和高效率的显微光致发光（PL）成像和光谱系统，该系统对温度变化稳定。尝试将In GaAs材料引入T形量子线中以稳定ID激子。结果表明，QWR 的横向约束能增加到 35meV，大约是相应 GaAs T-QWR 观察到的 18meV 的两倍。 PL 的温度依赖性表明，样品中激子在高达 150K 的温度下保持稳定。 AIA势垒的引入将进一步稳定ID激子以在室温下制备PL。T-QWR的主要困难在于在解理(110)晶体表面上的MBE生长。我们研究了原子力显微镜和我们的显微 PL 成像和光谱系统的 (110) MBE 生长的 GaAs 表面。观察到（110）表面固有的微米级大平台形成以及由此产生的调制电子态，这有助于不同温度下的激子扩散和热激活过程。可控性低但固有强限制的脊QWR激光器也已被研究出来。设计、制造和表征。它们在室温下发出激光，我们研究了微观起源、温度依赖性和均匀性。