Investigation of Anti-dot Superlattice in Quantum Hall State

量子霍尔态反点超晶格研究

• 批准号: 09831002
• 负责人: TAKAOKA Sadao
• 金额: $ 1.92万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1997
• 资助国家: 日本
• 起止时间: 1997 至 1998
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09831002/
• 关键词: Quantum Hall Effect; Fractional Quantum Hall Effect; Magneto-capacitance; Anti-dot Superlattice; Double-layr two-dimensional electron system; Far-infrared Fourier Spectroscopy; Edge State; Magnetic Electron Focusing Effect; 整数量子ホール効果; 遠赤外フーリエ分光 /

We have investigated the quantum phenomena in various type of two-dimensional electron system and obtained the following results.1. The breakdown current of quantum Hall effect is not proportional to the sample width in relatively homogeneous samples, while the current is proportional to the width in inhomogeneous samples and the sample with anti-dot superlattice.We explain these results due to the uniform Hall electric field caused by the inhomogeneous potential or anti-dots.2. The existence of the edge state in the fractional quantum Hall regime is confirmed and its width is determined by the magneto-capacitance measurement.The estimated width is of the order of microns, which is similar to the width in the integer quantum Hall regime.3. We observe the distortion of Fermi surface in the two-dimensional electron system due to the parallel magnetic fields by the magnetic electron focusing effect.The electron concentration dependence of the distortion depends on the methods to change the concentration (by illumination or the gate voltage).4. The cyclotron resonance of the double-layer two-dimensional electron system is measured is investigated by the Far-infrared Fourier magneto-spectrometer, where the magnetic field direction is changeable.The parallel magnetic field dependence of the cyclotron mass due to the distortion of Fermi surface is determined systematically.

我们研究了各种类型的二维电子系统中的量子现象，得到了以下结果： 1．在相对均匀的样品中，量子霍尔效应的击穿电流与样品宽度不成正比，而在非均匀样品和具有反点超晶格的样品中，电流与宽度成正比。我们将这些结果解释为均匀的霍尔电场由电位不均匀或反点引起。2．分数量子霍尔区域中边缘态的存在被证实，其宽度由磁电容测量确定。估计的宽度为微米量级，与整数量子霍尔区域中的宽度相似3。 。我们通过磁电子聚焦效应观察到二维电子系统中由于平行磁场导致的费米面的畸变。畸变的电子浓度依赖性取决于改变浓度的方法（通过照明或栅极电压） .4.利用远红外傅里叶磁谱仪测量了磁场方向可变的双层二维电子系统的回旋共振。费米畸变引起的回旋质量对平行磁场的依赖性表面是系统确定的。

项目成果

S.Takaoka: "Magnetocapacitance Investigation of Quantum Hall Effect and Edge States ;" Int.J.Mod.Phys B. 11. 2593-2619 (1997)

S.Takaoka：“量子霍尔效应和边缘态的磁电容研究；”

K.Ohtsuka: "Distortion of Fermi Surface Induced by Parallel Magnetic Field in a Two-Dimensional Electron Gas" Physica B. 249-251. 780-783 (1998)

K.Ohtsuka：“二维电子气中平行磁场引起的费米表面畸变”Physica B.249-251。

K.Oto: "Edge Channels in Integer and Fractional Quantum Hall Regime Investigated by Magnetocapacitance" Physica B. 249-251. 440-444 (1998)

K.Oto：“通过磁电容研究整数和分数量子霍尔体系中的边缘通道”Physica B. 249-251。

K.Murase: "Mesoscopic Physics and Electronics" Springer-Verlag, 132-138 (1998)

K.Murase：“介观物理与电子学”Springer-Verlag，132-138 (1998)

S.TAKAOKA: "Comparison of Nonlocal Resistance between Si-MOS FET and GaAs/AlGaAs Heterostructure" Proc.12th Int.Conf.High Magnetic Fields in Semiconductor Physics,(edited by G.Landwehr and W.Ossau,World Scientific,Singapore,1997). Vol.1. 223-226 (1997)

S.TAKAOKA：“Si-MOS FET 与 GaAs/AlGaAs 异质结构之间的非局部电阻比较”Proc.12th Int.Conf.High Magnetic Fields in Semiconductor Materials，（由 G.Landwehr 和 W.Ossau 编辑，World Scientific，新加坡，