"Realization of Schottky-limit at metal-semiconductor interfaces and its application to electron devices"

“金属-半导体界面肖特基极限的实现及其在电子器件中的应用”

• 批准号: 09450118
• 负责人: HASEGAWA Hideki
• 金额: $ 9.09万
• 依托单位: HOKKAIDO UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1997
• 资助国家: 日本
• 起止时间: 1997 至 1998
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09450118/
• 关键词: electrochemical process; Schottky limit; metal-semiconductor interface; Fermi-level pinning; nano metal particle; Schottky barrier height; ショットキー障壁高; インジウムリン; パルス法

The purpose of this study is to realize the "Schottky limit" for various metal-compound semiconductor (M-S) interfaces by removing Fermi-level pinning using an in-situ electrochemical process and to apply this process to various devices. The main results obtained are listed below :1) A novel in-situ electrochemical process enables us to produce Schottky contacts with strongly metal-workfunction dependent Schottky barrier heights (SBHs) for InP, GaAs and GaN.Particularly, SBHs higher than 0.86 and 0.92eV were achieved for Pt/n-InP and Pt/n-GaAs contacts, respectively. These values are close to those in the Schottky limit.2) The M-S interfaces prepared by the in-situ electrochemical process were found to possess no oxide interlayers, no interface stress as well as no process-induced defect levels.3) Detailed AFM measurements revealed that the electrochemical deposition was initiated by formation of nm-sized metal particles. Further deposition did not increase the particle size but increased density of particle. The SBH values exhibited a strong correlation with the particle distribution. The most uniform distribution of the smallest particles gave highest SBH values for Pt/n-InP contact. An I-V measurements using AFM system with conductive tip revealed that such high SBHs were realized in single Pt particles on InP and GaAs.4) The above results can be explained as follows : Under optimized conditions, the low-energy electrochemical process forms fine metal nano particles without causing a large degree of disorder on the semiconductor surface. The interface is free from oxide interlayers, interface stress and process-induced defects. This leads to removal of the Fermi-level pinning and to strongly metal-workfunction dependent SBH values.5) The in-situ electrochemical process was successfully applied to formation of sub-micron T-shaped

本研究的目的是通过使用原位电化学过程去除费米能级钉扎来实现各种金属化合物半导体（M-S）界面的“肖特基极限”，并将该过程应用于各种器件。获得的主要结果如下：1) 一种新颖的原位电化学工艺使我们能够为 InP、GaAs 和 GaN 生产具有强烈金属功函数依赖性肖特基势垒高度 (SBH) 的肖特基接触。特别是，SBH 高于 0.86 和 0.92 Pt/n-InP 和 Pt/n-GaAs 接触分别实现了 eV。这些值接近肖特基极限。2) 通过原位电化学工艺制备的 M-S 界面被发现不具有氧化物夹层、界面应力以及工艺引起的缺陷水平。3) 详细的 AFM 测量研究表明电化学沉积是由纳米尺寸金属颗粒的形成引发的。进一步的沉积并没有增加颗粒尺寸，但增加了颗粒的密度。 SBH 值与颗粒分布表现出很强的相关性。最小颗粒的最均匀分布为 Pt/n-InP 接触提供了最高的 SBH 值。使用具有导电尖端的 AFM 系统进行的 I-V 测量表明，如此高的 SBH 是在 InP 和 GaAs 上的单个 Pt 颗粒中实现的。4) 上述结果可以解释如下：在优化条件下，低能电化学过程形成精细金属纳米颗粒粒子不会在半导体表面造成很大程度的无序。该界面没有氧化物夹层、界面应力和工艺引起的缺陷。这导致费米能级钉扎的消除和强烈依赖于金属功函数的 SBH 值。5) 原位电化学过程已成功应用于亚微米 T 形的形成

项目成果

T.Muranaka: "Realization of InP-Based InGaAs Single Electron Transistors of Wires and Dots Grown by Selective MBE" Microelctronic Engineering. in press. (1999)

T.Muranaka：“通过选择性 MBE 生长的基于 InP 的 InGaAs 单电子晶体管的线和点的实现”微电子工程。

H.Hasegawa: "Interface Controlled Schottky Barriers on InP and Related Materials" Solid State Electron.vol.41, No.10. 1441-1450 (1997)

H.Hasekawa：“InP 及相关材料上的界面控制肖特基势垒”Solid State Electron.vol.41，No.10。

S.Suzuki: "Fabrication and Electrical Characterization of InP-Based Insulated Gate Power HEMTs Using Ultrathin Si Interface Control Layer" Solid-Sttate Electronics. 41. 1641-1646 (1997)

S.Suzuki：“使用超薄硅界面控制层的 InP 基绝缘栅功率 HEMT 的制造和电气特性”固态电子器件。

A.Hamamatsu: "A. Hamamatsu, C. Kaneshiro, H. Fujikura a nd H. Hasegawa, "Formation of <001>-Aligned Nano-Scale Pores on(001) n-InP Surfaces by Photoelectrochemical Anodization in HCl" Journal of Electroanalytical Cheistry. in press. (1999)

A.Hamamatsu：“A. Hamamatsu、C. Kaneshiro、H. Fujikura 和 H. Hasekawa，“通过在 HCl 中进行光电化学阳极氧化在 (001) n-InP 表面上形成 <001> 排列的纳米级孔”

H.Fujikura: "Controlled Formation of Narrow and Uniform InP-Based In_<0.53>Ga_<0.47>As Ridge Quantum Wire Arrays by Selective Molecular Beam Epitaxy" Japanese Journal of Applied Physics. 37. 1532-1539 (1998)

H.Fujikura：“通过选择性分子束外延控制窄且均匀的 InP 基 In_<0.53>Ga_<0.47>As 脊量子线阵列的形成”日本应用物理学杂志。