Epitaxial Growth of High Quality SiC by Sublimation Close Space Technique with High Growtn Rate

高生长率升华近距离技术外延生长高质量SiC

基本信息

批准号：
09450011
负责人：
NISHINO Shigehiro
金额：
$ 8.83万
依托单位：
Kyoto Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1997
资助国家：
日本
起止时间：
1997 至 1998
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09450011/
关键词：
silicon carbide epitaxial growth sublimation method 6H-SiC epitaxial layer closed space technique sublimation epitaxy SiC device SiC think film SiC 昇華エピアキシャル成長

项目摘要

In CST method, growth is promoted by sublimation and diffusion transfer in a narrow space which is constructed by source, substrate and graphite spacer. This method is basically same as conventional sublimation method for SiC-bulk. One big difference of configuration is the distance between source and substrate. We used 3C-SiC polycrystalline plate with high purity as source and High growth was achieved at a temperature range of 2200-2400ﾟC, and it was around 40-200 mu m/h. Activation energy obtained by temperature dependence of the growth rate was l47kcal/mol. By introducing off-angle to the substrate, a mirror-like morphology was obtained in the wide temperature range. Step bunching was also observed and trace width of the step was about 5 mu m. A defect having line shaped shadow was observed along <1120> direction, and it indicates that crystal growth followed step-flow mechanism. Surface morphology is often affected by many parameters such as spacer height. When the spacer height decreased, wavy pattern appeared. When the height increased, rather smooth surface appeared. Ta-sheet was also used to avoid unwanted carbon species from the wall of crucible. Appropriate condition, very smooth surface was obtained, however, carbonization of Ta seems a key parameter to get high quality SiC epilayer. Epilayer made in Ta pasted crucible, step-bunching free surface was obtained. Donor-acceptor pair emission was greatly suppressed in the photoluminescense measurement In this photoluminescence, RO and So lines, which is related excitons bound to neutral N donors, were observed. It means epitaxial layers are of high quality. These lines were especially observed epitaxial layers with high growth rate such as more than 100 mu m/h. It indicates that increasing growth rate may be useful to decrease impurity density doped into epitaxial layers. We made Schottky diodes showed breakdown voltage of 40V without edge termination.

在CST方法中，通过sus缩的sublimation促进了生长，而狭窄的空间中的扩散转移与SIC-Bulk的常规亚属性方法基本相同在2200-2400 c的温度范围内，使用的3C-SIC多晶板和高生长均为酸痛，并且通过温度依赖的生长速率获得的激活能量约为40-200 m/h。在底物中，也观察到了巨大的温度，并且在较宽的温度下获得了镜像。阶跃机制通常受到许多参数的影响，例如隔离度的高度，当高度增加时，ta片也会从坩埚中获得不需要的碳种类。然而，在粘贴钉钉中，碳化是一种关键参数。观察到的n供体意味着外延层的质量很高二极管显示带边缘终止的40V击穿电压。