Selective-area metal-organic vapor phase epitaxy for monolithically-integrated semiconductor photonic circuits

用于单片集成半导体光子电路的选择性区域金属有机气相外延

• 批准号: 09450007
• 负责人: NAKANO Yoshiaki
• 金额: $ 6.72万
• 依托单位: The University of Tokyo
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1997
• 资助国家: 日本
• 起止时间: 1997 至 1998
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09450007/
• 关键词: MOVPE; MOCVD; Selective-area growth; MOVE; Spectroscopic ellipsometry; Growth simulation; MMI coupler; Optical amplifier gate switch; MOVE2; InGaAs; InP; シミュレーション; 気相拡散

1. In-situ monitoring of MOVPE by spectroscopic ellipsometryWe here tried in-situ monitoring of metal-organic vapor phase epitaxy (MOVPE) by spectroscopic ellipsometry, and showed its ability to observe growth surface state. Applying the results of the observation, we made InGaAs/InP quantum wells having 1 to 3 molecular layers, and characterized them using CTR method. The signals from the CTR characterization were found to be superior to any previous reports, thereby we confirmed that their interfaces were truly monolayer abrupt.2. Longitudinal analysis of growth rate and film quality and Its application to growth condition optimizationWe experimentally investigated longitudinal distribution of growth rate and film quality along the direction of precursor flow in InP and GaAs MOVPE by preparing a special susceptor, and compared the results with our newly developed growth simulator. Based on the results, we specified the mechanism of surface roughness formation at high temperatures, an … More d made logical determination of growth conditions for avoiding the surface roughness possible.3. Development of metal-organic vapor-phase-diffusion-enhanced selective-area epitaxyAs an active/passive integration technology in monolithic photonic integrated circuits, we proposed and developed metal-organic vapor-phase-diffusion-enhanced selective-area epitaxy (MOVE). By utilizing this technique, we could achieve band gap difference between active and passive regions at 1.55mum as large as 200nm in bulk material (due to composition variation), and as large as 500nm in quantum wells (due to composition and thickness variation). These numbers are by far larger than conventional ones.4. Simulation of selective-area MOVPEFor the purpose of understanding selective-area growth in MOVPE in a unified manner, we developed a universal simulator. By utilizing a two dimensional model that could take the effects of lateral vapor diffusion and lateral surface migration independently into account, we could explain the experimental results successfully. It was shown that, in the conventional selective-area growth, the surface migration channel was dominant whereas, in the MOVE, the lateral vapor diffusion channel was dominant.5. First fabrication of photonic devices and integrated circuits by MOVEThe MOVE is the only selective-area growth technology in the world which is able to form waveguide arrays. By applying this feature, we succeeded in fabricating 1x2 MMI couplers by selective-area epitaxy for the first time. Furthermore, by utilizing active/passive integration capability, we fabricated an optical amplifier gate switch circuit for photonic switching for the first time, and confirmed its operation. Less

1.利用光谱椭圆光度法对MOVPE进行原位监测我们尝试利用光谱椭圆光度法对金属有机气相外延（MOVPE）进行原位监测，并展示了其观察生长表面状态的能力。具有 1 至 3 个分子层的 InGaAs/InP 量子阱，并使用 CTR 方法对其进行表征 发现 CTR 表征的信号优于任何先前的信号。报告中，我们由此证实它们的界面确实是单层突变的。生长速率和薄膜质量的纵向分析及其在生长条件优化中的应用我们实验研究了InP和GaAs中生长速率和薄膜质量沿前驱体流动方向的纵向分布。通过准备特殊的感受器进行MOVPE，并将结果与​​我们新开发的生长模拟器进行比较，根据结果，我们明确了高温下表面粗糙度形成的机制，并合理确定了避免表面粗糙度的生长条件。 3.金属有机气相扩散增强选择性区域外延的发展作为单片光子集成电路中主动/无源集成技术，我们开发了金属有机气相扩散增强选择性区域外延通过利用这种技术，我们可以在块体材料中实现有源区域和无源区域之间的带隙差异达 1.55μm 和 200nm。成分变化），并且在量子阱中高达500nm（由于成分和厚度变化）这些数字远远大于传统的。4.选择性区域MOVPE的模拟用于了解MOVPE中的选择性区域生长。我们以统一的方式开发了一个通用的模拟器，可以独立考虑横向蒸汽扩散和横向表面迁移的影响，结果表明，在传统的情况下，我们可以成功地解释实验结果。选择性区域生长中，表面迁移通道占主导地位，而MOVE中，横向蒸气扩散通道占主导地位。5．MOVE技术是世界上唯一一种选择性区域生长技术。通过应用这一特性，我们首次成功地通过选择性区域外延制造了1x2 MMI耦合器。此外，利用有源/无源集成能力，我们制造了光放大器门。首次实现了光子开关的开关电路，并确认了其运行情况。

项目成果

Masakazu Sugiyama, Kohtaro Kusunoki, Yukihiro Shimogaki, Shinya Sudo, Yoshiaki Nakano, Hidetoshi Nagamoto, Katsuro Sugawara, Kunio Tada, and Hiroshi Komiyama: "Kinetic studies on thermal decomposition of MOVPE sources using Fourier transform infrared spec

Masakazu Sugiyama、Kohtaro Kusunoki、Yukihiro Shimogaki、Shinya Sudo、Yoshiaki Nakano、Hidetoshi Nagamoto、Katsuro Sugarara、Kunio Tada 和 Hiroshi Komiyama：“使用傅里叶变换红外光谱对 MOVPE 源热分解的动力学研究

Yoshiyuki Mishima: "Two-dimensional simulation of the growth enhancement in selective area metal-organic vapor prase epitaxy" Meeting Abstract,194th Electrochemical Society Annual Meeting. 98-2. 839 (1998)

Yoshiyuki Mishima：“选择性区域金属有机气相外延生长增强的二维模拟”会议摘要，第 194 届电化学学会年会。

Martin Bouda: "Extremely,large in-plane bandgap shifts by MOVPE selective area growth using TBA and TBP" Proc.of Eighth European Conf.on Integrated Optics(ECIO'97). EThH1. 298-301 (1997)

Martin Bouda：“使用 TBA 和 TBP 通过 MOVPE 选择性区域增长实现极其大的面内带隙变化”第八届欧洲集成光学会议 (ECIO97) 论文集。

須藤信也: "動的エリプソメトリ法によるMOVPE成長層表面のその場観察(IV)-V族雰囲気の効果" 第58回応用物理学会学術講演会. 2a-M-2 (1997)

Shinya Sudo：“使用动态椭圆光度术（IV）对MOVPE生长层表面进行原位观察-V族大气的影响”第58届日本应用物理学会年会2a-M-2（1997）。

Masakazu Sugiyama: "Kinefic studies on thermal decomposition of MOVPE sources using Fourier transform in frared spectroscopy" Applied Surface Science. 117/118. 746-752 (1997)

Masakazu Sugiyama：“利用红外光谱中的傅里叶变换对 MOVPE 源的热分解进行动力学研究”应用表面科学。