Selective-area metal-organic vapor phase epitaxy for monolithically-integrated semiconductor photonic circuits

用于单片集成半导体光子电路的选择性区域金属有机气相外延

• 批准号: 09450007
• 负责人: NAKANO Yoshiaki
• 金额: $ 6.72万
• 依托单位: The University of Tokyo
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1997
• 资助国家: 日本
• 起止时间: 1997 至 1998
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09450007/
• 关键词: MOVPE; MOCVD; Selective-area growth; MOVE; Spectroscopic ellipsometry; Growth simulation; MMI coupler; Optical amplifier gate switch; MOVE2; InGaAs; InP; シミュレーション; 気相拡散

1. In-situ monitoring of MOVPE by spectroscopic ellipsometryWe here tried in-situ monitoring of metal-organic vapor phase epitaxy (MOVPE) by spectroscopic ellipsometry, and showed its ability to observe growth surface state. Applying the results of the observation, we made InGaAs/InP quantum wells having 1 to 3 molecular layers, and characterized them using CTR method. The signals from the CTR characterization were found to be superior to any previous reports, thereby we confirmed that their interfaces were truly monolayer abrupt.2. Longitudinal analysis of growth rate and film quality and Its application to growth condition optimizationWe experimentally investigated longitudinal distribution of growth rate and film quality along the direction of precursor flow in InP and GaAs MOVPE by preparing a special susceptor, and compared the results with our newly developed growth simulator. Based on the results, we specified the mechanism of surface roughness formation at high temperatures, an … More d made logical determination of growth conditions for avoiding the surface roughness possible.3. Development of metal-organic vapor-phase-diffusion-enhanced selective-area epitaxyAs an active/passive integration technology in monolithic photonic integrated circuits, we proposed and developed metal-organic vapor-phase-diffusion-enhanced selective-area epitaxy (MOVE). By utilizing this technique, we could achieve band gap difference between active and passive regions at 1.55mum as large as 200nm in bulk material (due to composition variation), and as large as 500nm in quantum wells (due to composition and thickness variation). These numbers are by far larger than conventional ones.4. Simulation of selective-area MOVPEFor the purpose of understanding selective-area growth in MOVPE in a unified manner, we developed a universal simulator. By utilizing a two dimensional model that could take the effects of lateral vapor diffusion and lateral surface migration independently into account, we could explain the experimental results successfully. It was shown that, in the conventional selective-area growth, the surface migration channel was dominant whereas, in the MOVE, the lateral vapor diffusion channel was dominant.5. First fabrication of photonic devices and integrated circuits by MOVEThe MOVE is the only selective-area growth technology in the world which is able to form waveguide arrays. By applying this feature, we succeeded in fabricating 1x2 MMI couplers by selective-area epitaxy for the first time. Furthermore, by utilizing active/passive integration capability, we fabricated an optical amplifier gate switch circuit for photonic switching for the first time, and confirmed its operation. Less

1。通过光谱椭圆仪对MOVPE的原位监测，在这里尝试通过光谱椭圆法对金属有机蒸气相（MOVPE）的原位监测，并显示了其观察生长表面状态的能力。应用观察结果，我们制造了具有1到3个分子层的Ingaas/INP量子井，并使用CTR方法对其进行了表征。发现CTR表征的信号比以前的任何报道都优于任何报道，因此我们确认它们的界面确实是单层的。2。对生长速率和薄膜质量的纵向分析及其在生长条件优化中的应用，我们通过准备特殊的感受器通过准备特殊的感受器来研究生长速率和膜质量的纵向分布沿INP和GAAS MOVPE的纵向分布，并将结果与​​我们新开发的生长模拟器进行了比较。根据结果​​，我们指定了在高温下表面粗糙度形成的机理，这是……更多的逻辑确定生长条件以避免表面粗糙度。3。我们提出并开发的金属有机有机蒸气蒸汽相 - 散热器 - 增强的选择性选择性区域（移动）。通过使用此技术，我们可以在1.55mum的活性区域和被动区域之间实现散装材料（由于组成和厚度变化）之间的带隙差异。这些数字比传统数字大。4。选择性区域Movpe的模拟目的是以统一的方式理解Movpe的选择性区域的增长，我们开发了一个通用模拟器。通过利用二维模型，该模型可以独立考虑侧向蒸气扩散和横向迁移的影响，我们可以成功解释实验结果。结果表明，在常规的选择性区域的生长中，表面迁移通道是主要的，而在移动中，侧向蒸气扩散通道是主要的。5。通过移动，首次制造光子设备和集成电路是世界上唯一能够形成波导阵列的选择性区域增长技术。通过应用此功能，我们首次成功地通过选择性区域外观制造了1x2 mmi耦合器。此外，通过利用主动/被动集成能力，我们首次制造了光子开关的光学放大器门开关电路，并确认了其操作。较少的

项目成果

Yoshiyuki Mishima: "Two-dimensional simulation of the growth enhancement in selective area metal-organic vapor prase epitaxy" Meeting Abstract,194th Electrochemical Society Annual Meeting. 98-2. 839 (1998)

Yoshiyuki Mishima：“选择性区域金属有机气相外延生长增强的二维模拟”会议摘要，第 194 届电化学学会年会。

Martin Bouda: "Extremely,large in-plane bandgap shifts by MOVPE selective area growth using TBA and TBP" Proc.of Eighth European Conf.on Integrated Optics(ECIO'97). EThH1. 298-301 (1997)

Martin Bouda：“使用 TBA 和 TBP 通过 MOVPE 选择性区域增长实现极其大的面内带隙变化”第八届欧洲集成光学会议 (ECIO97) 论文集。

Masakazu Sugiyama: "Kinefic studies on thermal decomposition of MOVPE sources using Fourier transform in frared spectroscopy" Applied Surface Science. 117/118. 746-752 (1997)

Masakazu Sugiyama：“利用红外光谱中的傅里叶变换对 MOVPE 源的热分解进行动力学研究”应用表面科学。

Yoshiaki Nakano: "In-situ characterization and modeling of MOVPE for optoelectronic devices" Conf.proc.,10th Inlernational Conf.on Indium phosphide and Related Materials (IPRM'98). WA1-1. 313-316 (1998)

Yoshiaki Nakano：“光电器件 MOVPE 的原位表征和建模”Conf.proc.，第 10 届磷化铟及相关材料国际会议 (IPRM98)。

Masakazu Sugiyama, Kohtaro Kusunoki, Yukihiro Shimogaki, Shinya Sudo, Yoshiaki Nakano, Hidetoshi Nagamoto, Katsuro Sugawara, Kunio Tada, and Hiroshi Komiyama: "Kinetic studies on thermal decomposition of MOVPE sources using Fourier transform infrared spec

Masakazu Sugiyama、Kohtaro Kusunoki、Yukihiro Shimogaki、Shinya Sudo、Yoshiaki Nakano、Hidetoshi Nagamoto、Katsuro Sugarara、Kunio Tada 和 Hiroshi Komiyama：“使用傅里叶变换红外光谱对 MOVPE 源热分解的动力学研究