New understanding of deformation and recrystallization based on single-crystal stress measurement
基于单晶应力测量对变形和再结晶的新认识
基本信息
- 批准号:23560088
- 负责人:
- 金额:$ 2.66万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (C)
- 财政年份:2011
- 资助国家:日本
- 起止时间:2011 至 2013
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
The distribution of stress/strain in <111> aluminum single crystals was measured at as-grown, 8% tensile deformation, and post-deformation annealing stages, by using synchrotron radiation. A typical as-grown single crystal was composed of three sub-grains bounded by sub-boundaries. After 8% tensile deformation, the sub-grained structure remained. The residual stress approximately of 5MPa was randomly distributed in each sub-grain. The crystal quality of recrystallized grains formed after 753K annealing was better by far than that of the as-grown crystal. By using the synchrotron radiation, it was possible to measure the stress/strain with very high resolution and accuracy.
通过使用同步加速器辐射,在生长时、8%拉伸变形和变形后退火阶段测量<111>铝单晶中的应力/应变分布。典型的生长单晶由由子边界界定的三个子晶粒组成。 8%拉伸变形后,亚晶结构仍然存在。每个亚晶粒内的残余应力随机分布,约为5MPa。 753K退火后形成的再结晶晶粒的晶体质量远远好于生长晶体的晶体质量。通过使用同步加速器辐射,可以以非常高的分辨率和精度测量应力/应变。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
アルミニウム単結晶における塑性変形中その場格子ひずみ測定
铝单晶塑性变形过程中的原位晶格应变测量
- DOI:
- 发表时间:2013
- 期刊:
- 影响因子:0
- 作者:城鮎美;菖蒲敬久;岡田達也;河野智哉;文屋宏友
- 通讯作者:文屋宏友
Relationship between residual stress and recrystallization in aluminum single crystal
铝单晶残余应力与再结晶的关系
- DOI:
- 发表时间:2012
- 期刊:
- 影响因子:0
- 作者:Ayumi Shiro
- 通讯作者:Ayumi Shiro
Relationship between residual stress and recrystallization in aluminum single crystal
铝单晶残余应力与再结晶的关系
- DOI:
- 发表时间:2012
- 期刊:
- 影响因子:0
- 作者:Ayumi Shiro et al.
- 通讯作者:Ayumi Shiro et al.
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Facilitation of ion implantation through femtosecond-laser-induced modifications on diamond surface
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A proposal for electrode formation at low annealing temperatures via the application of femtosecond-laser-induced modifications on silicon carbide
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Source of surface defects in silicon carbide epitaxial files and their elimination method
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16560009 - 财政年份:2004
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$ 2.66万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Source of surface defects in silicon carbide epitaxial files and their elimination method
碳化硅外延锉表面缺陷的来源及消除方法
- 批准号:
16560009 - 财政年份:2004
- 资助金额:
$ 2.66万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Study on Multifractal and its Applications to the Digital Sum Problems
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12640135 - 财政年份:2000
- 资助金额:
$ 2.66万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
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