Synthesis of percolative ZnO quantum-dot superlattices

渗透式 ZnO 量子点超晶格的合成

• 批准号: 23510130
• 负责人: TOYAMA Toshihiko
• 金额: $ 3.49万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2011
• 资助国家: 日本
• 起止时间: 2011 至 2013
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23510130/
• 关键词: ナノ材料創製; パーコレーティブ伝導; 液相合成; 量子ドット超格子; コア／シェル構造; 酸化亜鉛; 酸化マグネシウム; パーコレーション転移

We have studied percolative (P-) quantum-dot superlattices (QDSLs) based on the percolation threshold for the formation of QDSLs that are suitable for solution-based fabrication processes. Cross-sectional transmission-electron-microscope measurements revealed the presence of ZnO cores with a mean radius of 2.5 nm that were densely and nearly mono-dispersed in the printed emission layer (EML). Elemental analysis indicated the presence of Mg elements locally around the ZnO cores, suggesting the formation of MgO shells. The blue shifts observed in the transmittance and photoluminescence spectra indicated band gap widening induced by quantum confinement effects. From analysis of the current versus voltage and current versus light intensity characteristics, the formation of the percolative current paths was indicated. Consequently, the structural and optical studies of the EML and the device performance of the light-emitting device demonstrate that the formation of P-QDSLs is possible.

我们基于形成 QDSL 的渗流阈值研究了渗流 (P-) 量子点超晶格 (QDSL)，该 QDSL 适合基于溶液的制造工艺。横截面透射电子显微镜测量显示，平均半径为 2.5 nm 的 ZnO 核存在，该核密集且几乎单分散在印刷发射层 (EML) 中。元素分析表明 ZnO 核周围局部存在 Mg 元素，表明形成了 MgO 壳。在透射率和光致发光光谱中观察到的蓝移表明量子限制效应引起的带隙加宽。通过对电流与电压和电流与光强度特性的分析，表明了渗透电流路径的形成。因此，EML 的结构和光学研究以及发光器件的器件性能表明 P-QDSL 的形成是可能的。

项目成果

Printed Electroluminescent Devices Containing Solution-Processed Zinc-Based Inorganic-Semiconductor Nanocrystals

含有溶液处理的锌基无机半导体纳米晶体的印刷电致发光器件

• 发表时间: 2011
• 作者: Toshihiko Toyama

Optical Absorption Spectra of P-type Tin Monoxide Thin Films around Their Indirect Fundamental Gaps Determined Using Photothermal Deflection Spectroscopy

使用光热偏转光谱法测定间接基本间隙周围 P 型一氧化锡薄膜的光学吸收光谱

• DOI: 10.1016/j.tsf.2013.05.141
• 发表时间: 2014
• 作者: Toshihiko Toyama; Yuichi Seo; Takafumi Konishi; Hiroaki Okamoto; Ryohei Morimoto; Yuichi Nishikawa;Yasuo Tsutsumi
• 通讯作者: Yasuo Tsutsumi

Top-Emission Ultraviolet-Light-Emitting Diodes Containing Solution-Processed ZnO Nanocrystals

含有溶液处理的 ZnO 纳米晶体的顶部发射紫外发光二极管

• 发表时间: 2011
• 影响因子: 2.3
• 作者: Toshihiko Toyama; Hayato Kawasaki; Kazuki Itatani;Hiroaki Okamoto
• 通讯作者: Hiroaki Okamoto

Printed Electroluminescent Devices Containing Solution-Processed Zinc-Based Inorganic-Semiconductor Nanocrystals

含有溶液处理的锌基无机半导体纳米晶体的印刷电致发光器件

• 发表时间: 2011
• 作者: Toshihiko Toyama

Physical Properties of p-Type Tin Monoxide Films Deposited at Low Temperature by Radio Frequency Magnetron Sputtering

射频磁控溅射低温沉积p型一氧化锡薄膜的物理性能

• 发表时间: 2011
• 影响因子: 2.3
• 作者: Toshihiko Toyama; Yuichi Seo; Takafumi Konishi; Hiroaki Okamoto;Yasuo Tsutsumi
• 通讯作者: Yasuo Tsutsumi