Development of practical theoretical calculation of semiconductor-laser gain including many-body Coulomb interactions and its experimental verifications with high-quality quantum-wire lasers

开发包括多体库仑相互作用在内的半导体激光增益实用理论计算及其使用高质量量子线激光器的实验验证

基本信息

批准号：
23360135
负责人：
AKIYAMA Hidefumi
金额：
$ 12.65万
依托单位：
The University of Tokyo
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2011
资助国家：
日本
起止时间：
2011-04-01 至 2014-03-31
项目状态：
已结题

项目摘要

Optical gain in semiconductor lasers has practically been calculated with band theories based on free electron approximations. In this study, we introduced mean-field approximations for many-body Coulomb interactions among carriers in two-dimensional quantum well system and one-dimensional quantum wire system. We developed practical calculation codes, and quantitatively calculated mode gain of the lasers by determining calculation parameters on the basis of the k-p perturbation theory. We also developed simplified calculation method by neglecting the wave-number dependence of screening for the Coulomb interactions. In the experiments, we precisely measured carrier density dependence of the gain spectrum in a 3 period T-shaped quantum-wire-laser sample with high quality. By comparing the peak gain values and quantitative gain spectra obtained with the theories and experiments, we verified the usefulness of the developed theories.

半导体激光器的光学增益实际上是用基于自由电子近似的能带理论计算的。在这项研究中，我们引入了二维量子阱系统和一维量子线系统中载流子之间多体库仑相互作用的平均场近似。我们开发了实用的计算代码，并根据k-p微扰理论确定计算参数，定量计算了激光器的模式增益。我们还通过忽略库仑相互作用筛选的波数依赖性，开发了简化的计算方法。在实验中，我们精确测量了高质量的 3 周期 T 形量子线激光器样品中载流子密度对增益谱的依赖性。通过比较理论和实验获得的峰值增益值和定量增益谱，我们验证了所开发理论的有用性。

项目成果

期刊论文数量（0）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

Biexciton Luminescence from Individual Isoelectronic Traps in NitrogenDelta-DopedGaAs

氮Delta掺杂GaAs中单个等电子陷阱的双激子发光

DOI：
10.1143/apex.5.111201
发表时间：
2012
期刊：
影响因子：
0
作者：
K. Takamiya; T. Fukushima; S. Yagi; Y. Hijikata; T. Mochizuki; M. Yoshita; H. Akiyama; S. Kuboya; K. Onabe; R. Katayama;H. Yaguchi
通讯作者：
H. Yaguchi

Applicability of continuum absorption in semiconductor quantum wells to absolute absorption-strength standards

半导体量子阱中连续吸收对绝对吸收强度标准的适用性