２次元半導体ＭｏＳ２トランジスタにおける界面特性の理解と制御

了解和控制二维半导体 MoS2 晶体管的界面特性

• 批准号: 17J09690
• 负责人: 方 楠
• 金额: $ 1.09万
• 依托单位: The University of Tokyo
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for JSPS Fellows
• 财政年份: 2017
• 资助国家: 日本
• 起止时间: 2017-04-26 至 2019-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-17J09690/
• 关键词: MoS2; interface; capacitance measurement; accumulation-mode FET; FET; quantum capacitance; interface states; density of states; MIT; impedance spectroscopy

The understanding of operation mode as well as interface are important for 2D materials based FET. An accumulation-mode FET model is developed based on a partial top-gate MoS2 FET.The operation mechanism of an accumulation-mode FET is validated and clarified by the capacitance measurement. A depletion capacitance－quantum capacitance transition is observed. The universal thickness scaling rule of 2D-FETs is then proposed, which provides guidance for future research on 2D materials.The interface properties of MoS2 is systematically investigated. For conduction band side, interface states are mainly attributed to Mo-S bond bending caused by the surface strain and the substrate roughness. For valance band side, the interface states mainly come from the sulfur vacancy induced defect-states.

对基于 2D 材料的 FET 的工作模式和界面的理解非常重要。基于部分顶栅 MoS2 FET 开发了累积模式 FET 模型。通过以下方法验证和阐明了累积模式 FET 的工作机制。然后提出了二维场效应晶体管的耗尽电容-量子电容转变的通用厚度缩放规则，为未来的二维材料研究提供了指导。系统地研究了MoS2的性质，对于导带侧，界面态主要归因于表面应变和基底粗糙度引起的Mo-S键弯曲。对于价带侧，界面态主要来自硫空位引起的缺陷。州。

项目成果

Quantitative study of interfacial properties in monolayer MoS2 FET

单层 MoS2 FET 界面特性的定量研究

• 发表时间: 2017
• 作者: Nan Fang;Kosuke Nagashio
• 通讯作者: Kosuke Nagashio