２次元半導体ＭｏＳ２トランジスタにおける界面特性の理解と制御

了解和控制二维半导体 MoS2 晶体管的界面特性

• 批准号: 17J09690
• 负责人: 方 楠
• 金额: $ 1.09万
• 依托单位: The University of Tokyo
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for JSPS Fellows
• 财政年份: 2017
• 资助国家: 日本
• 起止时间: 2017-04-26 至 2019-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-17J09690/
• 关键词: MoS2; interface; capacitance measurement; accumulation-mode FET; FET; quantum capacitance; interface states; density of states; MIT; impedance spectroscopy

The understanding of operation mode as well as interface are important for 2D materials based FET. An accumulation-mode FET model is developed based on a partial top-gate MoS2 FET.The operation mechanism of an accumulation-mode FET is validated and clarified by the capacitance measurement. A depletion capacitance－quantum capacitance transition is observed. The universal thickness scaling rule of 2D-FETs is then proposed, which provides guidance for future research on 2D materials.The interface properties of MoS2 is systematically investigated. For conduction band side, interface states are mainly attributed to Mo-S bond bending caused by the surface strain and the substrate roughness. For valance band side, the interface states mainly come from the sulfur vacancy induced defect-states.

对操作模式以及界面的理解对于基于2D材料的FET非常重要。累积模式FET模型是基于部分顶栅MOS2 FET开发的。累积模式FET的操作机理通过电容测量验证并阐明。观察到部署电容 - 量子电容过渡。然后提出了2D-FET的通用厚度缩放规则，该规则为未来对2D材料的研究提供了指导。MOS2的界面特性已系统地研究。对于传导带侧，界面状态主要归因于由表面应变和底物粗糙度引起的MO-S键弯曲。对于价带侧，界面状态主要来自硫空位感应的缺陷态。

项目成果

Quantitative study of interfacial properties in monolayer MoS2 FET

单层 MoS2 FET 界面特性的定量研究

• 发表时间: 2017
• 作者: Nan Fang;Kosuke Nagashio
• 通讯作者: Kosuke Nagashio