Pressure effect and its mechanism of interlayer coupling on the artificial lattice with semiconductor/ferromagnetic phaces of iron silicide.

硅化铁半导体/铁磁相人工晶格的压力效应及其层间耦合机制。

• 批准号: 21560022
• 负责人: TAKEDA Kaoru
• 金额: $ 3.08万
• 依托单位: Fukuoka Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2009
• 资助国家: 日本
• 起止时间: 2009 至 2011
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-21560022/
• 关键词: ヘテロ構造; 鉄シリサイド; 人工格子; 静水圧力; 電気抵抗率; 超格子; 量子井戸; スピントロニ; 圧力効果; スピントロニクス

We present preliminary results of electrical resistivity measurements of Fe3Si/FeSi2 aetificial lattices under hydrostatic pressures up to 2.6GPa. The measurement have been performed on the Fe3Si single layer thin film and the[Fe3Si(25A)/FeSi2(7.5A)] 20 multilayer thin film with anti-ferromagnetically coupling among Fe3Si layers. For the Fe3Si single layer thin film, it is observed that the resistivity increases with increasing pressure, showing a tendency to saturate. On the other hand, it is found that the resistivity of the[Fe3Si(25A)/FeSi2(7.5A)]_<20> multilayer thin film increases monotonically with increasing pressure. The pressure effect of the resistivity for Fe3Si single layered thin film were less than+0.6%/GPa, and for FeSi2 single layered thin film, were less than+1.0%/GPa, and for the[Fe3Si(25A)/FeSi2(7.5A)] 0_<20> multilayer thin film with anti-ferromagnetically coupling, were less than+2%/GPa, and for ferromagnetocally coupling, were less than+1.0%/GPa.

我们提出了在高达 2.6GPa 的静水压力下 Fe3Si/FeSi2 人工晶格电阻率测量的初步结果。对Fe3Si单层薄膜和Fe3Si层间具有反铁磁耦合的[Fe3Si(25A)/FeSi2(7.5A)]20多层薄膜进行了测量。对于Fe3Si单层薄膜，观察到电阻率随着压力的增加而增加，表现出饱和的趋势。另一方面，发现[Fe3Si(25A)/FeSi2(7.5A)]_<20>多层薄膜的电阻率随着压力的增加而单调增加。压力对Fe3Si单层薄膜电阻率的影响小于+0.6%/GPa，对FeSi2单层薄膜电阻率的影响小于+1.0%/GPa，对[Fe3Si(25A)/FeSi2(7.5) A)]0_<20>多层薄膜具有反铁磁耦合，小于+2%/GPa，而对于铁磁耦合，小于+2%/GPa大于+1.0%/GPa。

项目成果

Temperature-Dependent Current-Induced Magnetization Switching in Fe_3Si/FeSi_2/Fe_3Si Trilayered films.

Fe_3Si/FeSi_2/Fe_3Si 三层薄膜中与温度相关的电流感应磁化转变。

• 发表时间: 2011
• 影响因子: 1.5
• 作者: Shinichi Hirakawa

Current-Induced Magnetization Switching in Fe3Si/FeSi2 Multilayered films

Fe3Si/FeSi2 多层薄膜中的电流感应磁化翻转

• 发表时间: 2011
• 作者: Takayuki Sonoda

Fe3Si/FeSi2/FeSi3三層膜における磁場印可及び電流注入磁化反転の温度依存性

Fe3Si/FeSi2/FeSi3 三层薄膜中磁场施加和电流注入磁化反转的温度依赖性

• 发表时间: 2011
• 作者: 野田祐太

Fe3Si/ナノ微結晶FeSi2/Fe3Si三層膜における電流注入による磁化反転

Fe3Si/纳米晶 FeSi2/Fe3Si 三层薄膜中电流注入的磁化反转

• 发表时间: 2009
• 作者: 平川信一

[Fe3Si/FeSi2]n人工格子CPP素子の創製に向けた基盤研究

[Fe3Si/FeSi2]n 人工晶格 CPP 器件创建的基础研究

• 发表时间: 2011
• 作者: 野田祐太