Monolithic integration of multi-wavelength light emitter By vapor-diffusion-dominated selective-area growth

通过蒸汽扩散主导的选择性区域生长单片集成多波长光发射器

• 批准号: 20686022
• 负责人: SUGIYAMA Masakazu
• 金额: $ 16.31万
• 依托单位: The University of Tokyo
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Young Scientists (A)
• 财政年份: 2008
• 资助国家: 日本
• 起止时间: 2008 至 2010
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-20686022/
• 关键词: InGaN; MOVPE; 選択成長; 多重量子井戸; 発光ダイオード; 波長シフト; 有機金属気相成長; GaN; 発光波長制御; 多色集積

Selective-area growth (SAG) of InGaN/GaN multiple quantum wells (MQWs), taking advantage of the vapor-phase diffusion of layer precursors with the use of wide (more than 100μm in width) masks, has been investigated in order to achieve in-plane modulation of light-emission wavelength. The mechanism behind such wavelength modulation has been explored through the analysis of the SAG of GaN, InN and InGaN bulk layers. Aiming at a wider range of wavelength modulation, a GaN hexagonal pyramid, with tailored mask width surrounding it, has been adopted and InGaN/GaN MQWs have been grown on the semi-polar surfaces on the pyramids. A multi-wavelength light emitter has been fabricated on the basis of this approach.

InGaN/GaN 多量子阱 (MQW) 的选择性区域生长 (SAG)，利用宽掩模（宽度超过 100μm），利用层前驱体的气相扩散，以实现通过分析 GaN、InN 和 InGaN 体层的 SAG，探索了这种波长调制背后的机制。采用了一种GaN六角锥体调制，其周围具有定制的掩模宽度，并且在锥体的半极性表面上生长了InGaN/GaN MQW，基于这种方法制造了多波长光发射器。 。

项目成果

Continuous wavelength modulation of semi-polar plane InGaN/GaN MQWs based on vapor-phase-diffusion-based selective-area pyramidal growth

基于气相扩散选择性区域金字塔生长的半极面 InGaN/GaN MQW 的连续波长调制

• 发表时间: 2011
• 作者: T.Fujiwara; Y.Nakano; M.Sugiyama
• 通讯作者: M.Sugiyama

Role of vapor-phase diffusion in selective-area MOVPE of InGaN/GaN MQWs

InGaN/GaN MQW 选择性区域 MOVPE 中气相扩散的作用

• 发表时间: 2009
• 作者: Yuki Tomita; Tomonari Shioda; Masakazu Sugiyama; Yukihiro Shimogaki; Yoshiaki Nakano
• 通讯作者: Yoshiaki Nakano

Continuous wavelength modulation of semi-polar plane InGaN/GaN MQWs based on vapor- phase-diffusion-based selective-area pyramidal growth

基于气相扩散选择性区域金字塔生长的半极面 InGaN/GaN MQW 的连续波长调制

• 发表时间: 2010
• 作者: Tatsuki Fujiwara; Yoshiaki Nakano; Masakazu Sugiyama
• 通讯作者: Masakazu Sugiyama

Selective area metal-organic vapor-phase epitaxy of InN, GaN and InGaN covering whole composition range

InN、GaN 和 InGaN 的选择性区域金属有机气相外延覆盖整个成分范围

• 发表时间: 2008
• 作者: Tomonari Shioda; Masakazu Sugiyama; Yukihiro Shimogaki; Yoshiaki Nakano
• 通讯作者: Yoshiaki Nakano

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