Study on atomic relaxation of III-N-V semiconductor

III-N-V族半导体原子弛豫研究

基本信息

批准号：
20360139
负责人：
KONDOW Masahiko
金额：
$ 11.9万
依托单位：
Osaka University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2008
资助国家：
日本
起止时间：
2008 至 2012
项目状态：
已结题

项目摘要

III-N-V semiconductors, such as GaInNAs,are material systems of interest showing prospects for the next generation optical devices such as laser diodes. Due to the requirement of low growth temperature, the as-grown samples of III-N-V semiconductors are known to contain a quantity of defects within the crystal. Post growth annealing is then a vital technique for its application to devices. However, the phenomena induced by annealing within the material system are still well not understood. We here employ large-scale synchrotron radiation facilities for the further investigation. X-ray absorption fine structure (XAFS) is a strong tool for the analysis of local atomic structure of materials. High-resolution hard X-ray photoelectron spectroscopy (HXPES) with the larger escape depth of photoelectrons as deep as several-tens nm facilitates non-destructive studies of bulk materials, nanoscale buried layers. Comparing the electrical status and bond configuration obtained by those, we analyze the annealing effect on the atomic relaxation of GaInNAs material system.

III-N-V 半导体（例如 GaInNA）是令人感兴趣的材料系统，显示出下一代光学器件（例如激光二极管）的前景。由于需要低生长温度，生长的 III-N-V 族半导体样品在晶体内含有大量缺陷。生长后退火是其应用于器件的重要技术。然而，材料系统内退火引起的现象仍不清楚。我们在这里使用大型同步辐射设备进行进一步的研究。 X射线吸收精细结构（XAFS）是分析材料局部原子结构的有力工具。高分辨率硬X射线光电子能谱（HXPES）的光电子逃逸深度可达数十纳米，有助于对块体材料、纳米级埋层进行无损研究。通过比较获得的电学状态和键构型，我们分析了退火对GaInNAs材料体系原子弛豫的影响。

项目成果

期刊论文数量（0）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

Introduction of GaInNAs Gain Medium into Circularly Arranged Photonic Crystal Cavity

将GaInNAs增益介质引入环形排列光子晶体腔中

DOI：
10.1143/jjap.50.102202
发表时间：
2011
期刊：
影响因子：
1.5
作者：
Kentaro Kukita; Hiroshi Nagatomo; Hiroaki Goto; Ryo Nakao; Katsunari Nakano; Masaya Mochizuki; Masahiko Kondow; Masato Morifuji;Fumitaro Ishikawa
通讯作者：
Fumitaro Ishikawa

Growth and luminescence characterization of dilute InPN alloys grown by molecular beam epitaxy

分子束外延稀 InPN 合金的生长和发光表征