Verallgemeinerte Ferninfrarot-Ellipsometrie von Ladungsträger-Magnetfeld-Effekten in III-V Verbindungshalbleiter Schichtstrukturen

III-V族化合物半导体层结构中电荷载流子磁场效应的广义远红外椭圆光度法

• 批准号: 5418143
• 负责人: Professor Dr. Mathias Schubert
• 金额: --
• 依托单位: Department of Electrical and Computer Engineering
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2004
• 资助国家: 德国
• 起止时间: 2003-12-31 至 2006-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/5418143?language=en
• 关键词: Verallgemeinerte; Ferninfrarot; Ellipsometrie; von; Ladungstr

The electron and hole effective mass m* and mobility u, and their dependence an the carrier concentration N shall be accurately determined using magnetooptic ellipsometry for exemplary multinary alloy zincblende group-III-group-V semiconductors. Materials of technological importance and current scientific interest investigated in this proposal are AIGaInP, and boron or nitrogen diluted InGaAs alloys, respectively. They can be grown n- or p-type with sufficiently high values of N, and u, and with excellent crystal quality by metal-organic vaporphase-epitaxy. When brought into magnetic fields, the free carriers cause birefringence at far-infrared wavelengths providing access to N, m*, and ,u independently from each other. Tools for the determination of the complex-valued magnetooptic birefringence in semiconductor layer structures are lacking completely at present. We will (1) setup a new far-infrared magnetooptic ellipsometer capable of reaching B = ±6 Tesla, and T = 4K ... 293K at the sample, and (2) determine the free-carrier-induced magnetooptic birefringence of n- or p-type materials within semiconductor layer structures, as a function of the magnetic field strength and Sample temperature, by far-infrared magnetooptic generalized ellipsometry, and (3) determine m, p, N, exemplarily for n- and p-type AIGalnP, InGaNAs, and BInGaAs alloys, and subsequently evaluate the dispersion of the accessible valence and conduction bands in the vicinity of the I'-point, and elucidate optical carrier scattering mechanisms.

对于具有技术重要性和当前科学兴趣的示例性多元合金闪锌矿半导体材料，电子和空穴有效质量 m* 和迁移率 u 及其与载流子浓度 N 的依赖性应使用磁光椭圆光度法准确确定。该提案中分别是 AIGaInP 和硼或氮稀释的 InGaAs 合金，它们可以通过以下方法生长出具有足够高的 N 和 u 值的 n 型或 p 型合金，并且具有优异的晶体质量。当进入磁场时，自由载流子会在远红外波长处产生双折射，从而提供彼此独立的 N、m* 和 ,u 测定复值磁光双折射的工具。我们将（1）建立一种新的远红外磁光椭偏仪，能够达到 B = ±6 Tesla，T = 4K ... 293K 的样品，以及 (2) 通过远红外磁光广义椭圆光度法确定半导体层结构内 n 型或 p 型材料的自由载流子感应磁光双折射，作为磁场强度和样品温度的函数，和 (3) 确定 m、p、N（以 n 型和 p 型 AIGaInP、InGaNAs 和 BInGaAs 合金为例），然后评估色散I'点附近的可及价带和导带，并阐明光学载流子散射机制。