Elimination of interface defects at SiC/insulator by introducing phosphorus and other atoms toward innovation of power MOSFETs

通过引入磷和其他原子消除SiC/绝缘体的界面缺陷，以实现功率MOSFET的创新

• 批准号: 23760283
• 负责人: YANO Hiroshi
• 金额: $ 2.83万
• 依托单位: University of Tsukuba (2013)Nara Institute of Science and Technology (2011-2012)
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Young Scientists (B)
• 财政年份: 2011
• 资助国家: 日本
• 起止时间: 2011 至 2013
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23760283/
• 关键词: 炭化ケイ素; MOSFET; 界面準位; しきい値変動; リン; 炭化珪素

In order to realize high-performance SiC power MOSFETs, defects at the SiC/insulator interface should be reduced greatly. In this study, effects of phosphorus introduction into the interface on the reduction of interface defects and improvement in MOSFET performance were investigated. In addition combination effects of phosphorus with hydrogen or nitrogen were also investigated. The channel mobility was improved by combination of phosphorus and hydrogen. The flatband and threshold voltage shifts were successfully minimized by both methods of combination of phosphorus and nitrogen and localization of phosphorus near the interface. The model of trap distribution in the SiC MOS structure was built from the threshold voltage instability experiments using various bias conditions and temperatures.

为了实现高性能SiC功率MOSFET，应大大减少SiC/绝缘体界面处的缺陷。在这项研究中，研究了将磷引入界面对减少界面缺陷和提高MOSFET性能的影响。此外，还研究了磷与氢或氮的组合效应。通过磷和氢的组合提高了沟道迁移率。通过磷和氮的组合以及磷在界面附近的定位两种方法成功地最小化了平带和阈值电压漂移。 SiC MOS 结构中的陷阱分布模型是通过使用不同偏置条件和温度的阈值电压不稳定性实验建立的。

项目成果

Improved Inversion Channel Mobility in 4H-SiC MOSFETs on Si Face Utilizing Phosphorus-Doped Gate Oxide

• DOI: 10.1109/led.2010.2047239
• 发表时间: 2010-07-01
• 期刊: IEEE ELECTRON DEVICE LETTERS
• 影响因子: 4.9
• 作者: Okamoto, Dai;Yano, Hiroshi;Fuyuki, Takashi
• 通讯作者: Fuyuki, Takashi

POCl3アニールによるSiC-MOSデバイスの高性能化

通过 POCl3 退火提高 SiC-MOS 器件的性能

• 作者: 矢野裕司;畑山智亮;冬木隆
• 通讯作者: 冬木隆

チャージポンピング法を用いた4H-SiC MOSFETにおける界面準位密度分布の評価

使用电荷泵方法评估 4H-SiC MOSFET 的界面态密度分布

• 作者: 大澤愛;矢野裕司;畑山智亮;冬木隆
• 通讯作者: 冬木隆

NO/POCl3複合アニール処理したSiC MOSデバイスの電子注入耐性

NO/POCl3复合退火处理的SiC MOS器件的电子注入电阻

• 发表时间: 2012
• 作者: 荒岡幹;矢野裕司;畑山智亮;冬木隆
• 通讯作者: 冬木隆

Improved Stability of 4H-SiC MOS Device Properties by Combination of NO and POCl3 Annealing

• DOI: 10.4028/www.scientific.net/msf.740-742.727
• 发表时间: 2013-01
• 期刊: Materials Science Forum
• 作者: H. Yano;Tsuyoshi Araoka;T. Hatayama;T. Fuyuki