Selective and rapid heating method for polycrystallization of amorphous Si using microwave plasma irradiation

微波等离子体辐照非晶硅多晶选择性快速加热方法

• 批准号: 18560007
• 负责人: NAKAGAWA Kiyokazu
• 金额: $ 2.35万
• 依托单位: University of Yamanashi
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2006
• 资助国家: 日本
• 起止时间: 2006 至 2007
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-18560007/
• 关键词: microwave plasma; Polycrystalline Si; thin film transistor; 電界効界トランジスタ; 多結晶シリコン・ゲルマニウム

We have developed a new technique which enables the selective and rapid heating of semiconductor films with the high conductivity and/or high dielectric constant by using microwave plasma irradiation. In order to apply the technique to crystallization of amorphous Si, a metal such as Ni, Pt and PtPd is deposited selectively on amorphous layers, since amorphous Si has neither high conductivity nor high dielectric constant. It will be shown in this present that the temperature ramping rate and attainable highest temperature by plasma irradiation depend on gas species of the atmosphere, gas pressure and metal species.A 100 nm amorphous silicon film was deposited on a quartz substrate by molecular beam deposition method, and a Ni layer was selectively formed on the amorphous film. Then, the sample was put in a vacuum chamber and irradiated in some gas atmosphere by microwave plasma with the frequency of 2.45GH_z and the output electric power of 1kW.The color of the entire Si region of the … More sample was changed from red to yellow by plasma irradiation, which means that the amorphous film changes to crystalline one. The cross-sectional STEM observation shows that the sample is poly-crystallized by plasma irradiation. During irradiation, some region of Ni film evaporated, which implies that the temperature of Ni increased up to at least 1000℃.The temperature of the Si region, which is 1 mm apart from the edge of the nickel layer, increases immediately after the plasma irradiation in the hydrogen ambient. The temperature depends on the pressure, and the highest temperature of 900℃ is achieved at about 150P_a.The highest temperatures of the Si regions are obtained as functions of the pressures of helium, nitrogen and argon in addition to hydrogen. The highest temperatures are at most 400℃ in all pressure regions independently of gas species except hydrogen, which suggests that the unstable and excited hydrogen-related species such as radicals and atoms also participate in the heating process. Less

我们开发了一种新技术，可以通过使用微波等离子体辐射选择性地快速加热具有高电导率和/或高介电常数的半导体薄膜，以便将该技术应用于非晶硅、镍等金属的结晶。 Pt和PtPd选择性地沉积在非晶层上，因为非晶Si既不具有高电导率，也不具有高介电常数。本文将示出通过等离子体照射的升温速率和可达到的最高温度。取决于气氛的气体种类、气压和金属种类。通过分子束沉积法在石英基板上沉积100nm的非晶硅膜，并在非晶膜上选择性地形成Ni层，然后放置样品。在真空室中，在某种气体气氛中，用微波等离子体进行辐照，频率为2.45GH_z，输出电功率为1kW。样品整个Si区的颜色由红色变为黄色。截面STEM观察表明，在等离子体照射过程中，Ni膜的某些区域发生了蒸发，这意味着Ni的温度升高。至少达到1000℃。在氢气环境中等离子体照射后，距离镍层边缘1mm的Si区域的温度立即升高。温度取决于压力，在约150P_a时可达到900℃的最高温度。除氢气外，Si区域的最高温度是氦气、氮气和氩气压力的函数。最高温度为150P_a。大多数区域在所有压力下都达到 400℃，与除氢之外的气体种类无关，这表明与氢相关的不稳定和激发的种类（例如自由基和原子）也较少参与加热过程。

项目成果

Atmosphere Dependence of Silicon Crystallization by Microwave Annealing

微波退火硅结晶的气氛依赖性

• 发表时间: 2007
• 作者: S. Ashizawa; M. Mitsui; K. Arimoto; J. Yamanaka; K. Nakagawa; T. Arai; T. Takamatsu; K. Sawano; Y. Shiraki
• 通讯作者: Y. Shiraki

マイクロ波加熱による非晶質シリコンの結晶化

微波加热非晶硅结晶

• 发表时间: 2007
• 作者: 芦澤里樹;三井実;堀江忠司;有元圭介;山中淳二;中川清和;荒井哲司;高松利行;澤野憲太郎;白木靖寛第
• 通讯作者: 白木靖寛第

Influence of Ge atoms on mobility and junction properties of thin-film transistors fabricated on solid-phase crystallized poly-SiGe

Ge原子对固相结晶多晶SiGe薄膜晶体管迁移率和结性能的影响

• DOI: 10.1063/1.2385086
• 发表时间: 2006-11-06
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: Minoru Mitsui;K. Arimoto;J. Yamanaka;K. Nakagawa;K. Sawano;Y. Shiraki
• 通讯作者: Y. Shiraki

Crystallization of Amorphous Silicon by Micro-wave Annealing

微波退火非晶硅结晶

• 发表时间: 2007
• 作者: S. Ashizawa; M. Mitsui; T. Horie; K. Arimoto; J. Yamanaka; K. Nakagawa; T. Arai; T. Takamatsu; K. Sawano; Y. Shiraki
• 通讯作者: Y. Shiraki

Heating Mechanism of Microwave Plasma Annealing for Crystallization of Amorphous Silicon

非晶硅晶化微波等离子体退火加热机理

• 发表时间: 2007
• 作者: S. Ashizawa; S. Ariizumi; M. Mitsui; K. Arimoto; J. Yamanaka; K. Nakagawa; T. Arai; T. Takamatsu; K. Sawano; Y. Shiraki
• 通讯作者: Y. Shiraki