Innovation and electronic characterization of well-ordered hetero-interfaces on the organic single crystal surfaces

有机单晶表面有序异质界面的创新和电子表征

• 批准号: 23750209
• 负责人: NAKAYAMA Yasuo
• 金额: $ 3万
• 依托单位: Chiba University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Young Scientists (B)
• 财政年份: 2011
• 资助国家: 日本
• 起止时间: 2011 至 2012
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23750209/
• 关键词: 有機電子材料; 素子; 有機エレクトロニクス; 有機半導体; 単結晶; 価電子バンド構造; ｐｎヘテロ界面; 角度分解光電子分光法; 反射高速度電子回折法; ルブレン; 有機単結晶; 反射高速度電子線回折; 有機電界効果トランジスタ; 有機薄膜太陽電池; シンクロトロン放射光

Hetero-interfaces between an organic semiconducting material and an electrode metal, gate insulator, or another organic semiconductor are one of the most crucial factors dominating the performance of the practical organic electronic devices. In the present study, the electronic structures of such organic hetero-interfaces were elucidated on well-ordered interfaces fabricated onto the organic single crystal surfaces by means of angle-resolved photoelectron spectroscopy. On the rubrene single crystals covered with an overlayer of a normal alkane molecule as a model interface of the channel region a high-mobility organic field effect transistor, un-modified valence band dispersion width (i.e. band effective mass of conducting holes) was revealed. Hetero-interfaces of organic semiconductors with other organic materials or electronically quantized metal nano-structures were also systematically investigated.

有机半导体材料与电极金属，栅极绝缘体或其他有机半导体之间的异缘界面是主导实用有机电子设备性能的最关键因素之一。在本研究中，通过角度分辨的光电学光谱法阐明了这种有机杂质间空的电子结构在有机单晶表面上制造的有序界面上阐明。在rubrene单晶体上，覆盖着正常烷烃分子的叠加剂，作为通道区域的模型界面，揭示了高弹性有机场效应晶体晶体晶体，未改性的价带分散宽度（即导电孔的带有效质量）。还系统地研究了有机半导体与其他有机材料或电子量化金属纳米结构的杂异形。

项目成果

有機半導体分子と金属超薄膜量子井戸構造との相互作用

有机半导体分子与超薄金属量子阱结构的相互作用

• 发表时间: 2012
• 作者: Y. Ito;S. Nakagawa;A. Komagata;M. Ikeda-Saito;Y. Shiro;H. Nakamura;中山泰生
• 通讯作者: 中山泰生

Photoemission investigation inside the organic semiconductors: two-dimensional valence band structures, buried interfaces, and low-density of gap states

有机半导体内部的光电研究：二维价带结构、埋入界面和低密度能隙态

• 发表时间: 2013
• 作者: Yasuo Nakayama;Shin'ichi Machida;Yuki Uragami;Hiroumi Kinjo;T. Luan Nguyen;Masayuki Yamamoto;Yusuke Ozawa;Kazuhiko Mase;Yutaka Noguchi;K. Rasika Koswattage;Hisao Ishii
• 通讯作者: Hisao Ishii

NPBと各種電子輸送材料との界面ホール輸送障壁高さの光電子分光法による実測

利用光电子能谱法实测NPB与各种电子传输材料之间的界面空穴传输势垒高度

• 发表时间: 2011
• 作者: 小宮山卓史;鱒渕友治;本橋輝樹;吉川信一;中山泰生
• 通讯作者: 中山泰生

Electronic investigation inside crystalline organic semiconductors: two-dimensional valence band structures, gap states, and buried interfaces

晶体有机半导体内部的电子研究：二维价带结构、间隙态和埋入界面

• 发表时间: 2012
• 作者: Yasuo Nakayama;Shin'ichi Machida;Jens Niederhausen;Yuki Uragami;Hiroumi Kinjo;K. Rasika Koswattage;Kazuhiko Mase;Antje Vollmer;Juegen P. Rabe;Norbert Koch;Hisao Ishii
• 通讯作者: Hisao Ishii

Full Picture of Valence Band Structure of Rubrene Single Crystals Probed by Angle-Resolved and Excitation-Energy-Dependent Photoelectron Spectroscopy

• DOI: 10.1143/apex.5.111601
• 发表时间: 2012-11-01
• 期刊: APPLIED PHYSICS EXPRESS
• 影响因子: 2.3
• 作者: Nakayama, Yasuo;Uragami, Yuki;Ishii, Hisao
• 通讯作者: Ishii, Hisao