Development of X-ray diffractomator to realize in-situ observation of crystal growth

研制X射线衍射仪实现晶体生长原位观察

• 批准号: 23360009
• 负责人: TABUCHI MASAO
• 金额: $ 13.06万
• 依托单位: Nagoya University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2011
• 资助国家: 日本
• 起止时间: 2011-04-01 至 2014-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23360009/
• 关键词: X線回折測定; その場観察; 結晶成長; 分光集光結晶; 回転機構排除; X線集光光学系; X線回折; X線散乱; その場測定; X線反射率測定; ヨハンソン分光結晶; 稼動部のない測定; X線回折測定; その場観察; 結晶成長; 分光集光結晶; 回転機構排除; X線集光光学系; X線回折; X線散乱; その場測定; X線反射率測定; ヨハンソン分光結晶; 稼動部のない測定

Recently, surface and interface structures of advanced semiconductor devices should be controlled in an atomic scale, and the technique to investigate the real structures of the surfaces and interfaces is getting much important. In order to realize in-situ observation of the semiconductor device structures in conventional crystal growth system via X-ray diffraction and scattering measurements, a special X-ray diffractomator in which all the components, the X-ray source, the detector and the sample, were fixed was developed. A insident X-ray optics using two Johanson monochromator crystals were newly designed and developed to realize the in-situ observation with no motions. Using a compact vacuum chamber specially designed to use with the new optics, a evidence that semiconductor surfaces can really be observed using the system was obtained.

最近，高级半导体设备的表面和界面结构应以原子量表进行控制，并且研究表面和接口的真实结构的技术变得越来越重要。 为了实现传统晶体生长系统中半导体装置结构的原位观察，通过X射线衍射和散射测量值（一种特殊的X射线衍射器，其中所有成分，X射线源，检测器和样品均已固定。 新设计和开发了使用两个Johanson单色晶体的插件X射线光学元件，以实现无动作的原位观察。 使用专门设计用于新光学元件的紧凑型真空室，有证据表明，使用系统可以真正观察到半导体表面。