Growth of highly oriented h-BN single crystal by chemical vapor deposition method

化学气相沉积法生长高取向h-BN单晶

• 批准号: 23310096
• 负责人: WATANABE Kenji
• 金额: $ 11.9万
• 依托单位: National Institute for Materials Science
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2011
• 资助国家: 日本
• 起止时间: 2011-04-01 至 2014-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23310096/
• 关键词: 結晶工学; 六方晶窒化ホウ素; グラフェン; 原子層科学; 結晶成長; 気相成長; 格子欠陥; 電子デバイス; 原子層物理; 配向性基板; 気相成長法; 結晶工学; 六方晶窒化ホウ素; グラフェン; 原子層科学; 結晶成長; 気相成長; 格子欠陥; 電子デバイス; 原子層物理; 配向性基板; 気相成長法

Hexagonal boron nitride (h-BN), which has a 2D-plane layered structure composed of nitrogen and boron atoms in sp2 bonding, is a proven and effective substrate for atomic layer materials including graphene, because it has an atomically smooth surface that is relatively free of dangling bonds and charge traps.However, to realize atomic layer devices, the single-crystalline growth technique for hBN is of great importance. In this study, we achieved high quality h-BN homoepitaxial growth on the bulk h-BN substrate by employing chemical vapor deposition methods with high-growth temperature.

Hexagonal boron nitride (h-BN), which has a 2D-plane layered structure composed of nitrogen and boron atoms in sp2 bonding, is a proven and effective substrate for atomic layer materials including graphene, because it has an atomically smooth surface that is relatively free of dangling bonds and charge traps.However, to realize atomic layer devices, the single-crystalline growth technique for hBN is非常重要。在这项研究中，我们通过使用具有高增长温度的化学蒸气沉积方法来实现大量H-BN底物的高质量H-BN同型生长。