Strain-induced Effects on the Depletion Layer and Dissociation of Inert Hydrogen by Hot Carriers

应变引起的热载流子对耗尽层和惰性氢解离的影响

基本信息

批准号：
16510099
负责人：
MATSUDA Kazunori
金额：
$ 1.5万
依托单位：
Tokushima Bunri University (2006-2007)Naruto University of Education (2004-2005)
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2004
资助国家：
日本
起止时间：
2004 至 2007
项目状态：
已结题

项目摘要

The enormous stress-induced effects on the depletion layer capacitance of MOS capacitor is the original work of K. Matsuda, et. al., which is named piezocapacitance effect. The effect can be attributed to the change of intrinsic Fermi level due to the DOS change of band edge by band splitting.Recently, Ji-Song Lim, et. al. reported stress-induced effect on the threshold voltage of MOSFET (IEEE ED Letters 25, 2004). Their results seems to be related with the piezocapacitance effect, that is, the DOS change. Then their results are analyzed by applying our model of piezocapacitance effect and discussed by comparing with our results.The piezocapacitance effect may also affects to the photo current of PIN photo diode and Shcottky barrier. etc. So these devices are measured under strain application by using the four-points bending instrument made by the present project. It was reported by other researchers that strain broadens the range of the photon sensitivity band which is explained by the band-gap narrowing effects. However, this effect also may be mainly explained by the DOS change due to strain. So the photo sensitivity around the absorption edge frequency of Si is measured under strain application. Some results of these works are presented in the Nanotech 2008 international conference at Boston MA.On the research of the dissociation of inert hydrogen by hot carriers, a multiple scattering model is developed. An isotope effect in the slope of the substrate current versus lifetime requires a model beyond the standard single carrier lucky electron model typically used of MOSFET lifetime extrapolation. So the multiple scattering model is developed which allows us to explain this effect. A nonlinearity in the drain current vs. device lifetime curve similar to the one predicted by our model has already been observed by the IBM group.

应力对MOS电容器耗尽层电容的巨大影响是K. Matsuda等人的原创工作。等，这被称为压电电容效应。该效应可归因于由于能带分裂导致能带边缘的DOS变化而导致本征费米能级的变化。最近，Ji-Song Lim等人。等人。报道了应力对 MOSFET 阈值电压的影响（IEEE ED Letters 25, 2004）。他们的结果似乎与压电电容效应，即DOS变化有关。然后应用我们的压电电容效应模型对他们的结果进行分析，并与我们的结果进行比较进行讨论。压电电容效应还可能影响PIN光电二极管和Shcottky势垒的光电流。因此，利用本项目制作的四点弯曲仪对这些装置进行应变测量。其他研究人员报告称，应变拓宽了光子敏感带的范围，这可以通过带隙变窄效应来解释。然而，这种效应也可能主要由应变引起的 DOS 变化来解释。因此，在施加应变的情况下测量了 Si 吸收边频率附近的光敏度。这些工作的一些成果已在马萨诸塞州波士顿举行的 Nanotech 2008 国际会议上发表。在热载流子解离惰性氢的研究中，开发了多重散射模型。衬底电流与寿命的斜率中的同位素效应需要一个超出通常用于 MOSFET 寿命外推的标准单载流子幸运电子模型的模型。因此，开发了多重散射模型，使我们能够解释这种效应。 IBM 团队已经观察到漏极电流与器件寿命曲线中的非线性与我们的模型预测的相似。