Current-injection operation of quantum-wire lasers and verification of low threshold currents

量子线激光器的电流注入操作和低阈值电流的验证

基本信息

批准号：
16360148
负责人：
AKIYAMA Hidefumi
金额：
$ 9.6万
依托单位：
The University of Tokyo
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2004
资助国家：
日本
起止时间：
2004 至 2005
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-16360148/
关键词：
current injection GaAs quantum wires T-shaped laser MBE one dimension doping GaAs 電子正孔系

项目摘要

We achieved single-mode lasing in two-types of T-shaped-quantum-wire (T-wire) lasers using current-injection via perpendicular and parallel p-and n-doping layers. These lasers had cavity length of 0.5 mm and cavity mirror facets coated by high-reflectivity Au/SiO2 thin films. The T-wire lasers are formed by the cleaved-edge overgrowth method, and laser optical waveguide is located at a corner on each wafer, for which we cannot use conventional photo-lithography technique. In addition, singular p-n junction geometry of T-wire lasers with non-plainer structures cannot be designed with conventional one-dimensional Poisson equation tools. Therefore, we designed perpendicular and parallel doping profiles in T-wire lasers by try-and-errors, developed manual semiconductor processing methods, and devised our homemade optical characterization tools.In a T-wire laser with 15-array of T-wires and perpendicular p-and n-doping layers, we observed single-mode lasing in a wide temperature range of 5- … More 110K, which is the highest lasing temperature in current-injection T-wire lasers. Laser performance becomes optimum at 100 K, where we obtained threshold current of 2.1mA and differential quantum efficiency of 0.9%. In a T-wire laser with 20-array of T-wires and parallel p-and n-doping layers, on the other hand, we observed single-mode lasing in a temperature range of 30-70K. Laser performance becomes optimum at 30 K, where we obtained the lowest threshold current of 0.27 mA and high differential quantum efficiency of 12%. This threshold current value of 0.27 mA corresponds to 14 μ A per single T-wire. A theoretical value estimated by Yariv's analysis method and wire length of 0.5 mm, temperature of 30 K, and carrier lifetime of 0.4 ns is about 10 μ A per single T-wire. Our present result is very close to this estimation, and in principle confirms the predicted low threshold current in quantum wire lasers. Further detailed characterizations of luminescence and lasing spectra, current-voltage characteristics, current-light-output characteristics, threshold currents, differential quantum efficiencies as well as their temperature dependences have been achieved on our current-injection T-wire lasers. Less

我们通过垂直和平行的 p 和 n 掺杂层进行电流注入，在两种类型的 T 形量子线 (T 线) 激光器中实现了单模激光发射，这些激光器的腔长为 0.5 mm。镜面镀有高反射率Au/SiO2薄膜，T线激光器采用切边生长法形成，激光光波导位于每个镜面的角部。此外，具有非平面结构的 T 线激光器的奇异 p-n 结几何形状无法使用传统的一维泊松方程工具进行设计，因此我们设计了垂直和平行掺杂。通过反复试验，开发了手动半导体加工方法，并设计了我们自制的光学表征工具。在具有 15 个 T 线阵列和垂直线的 T 线激光器中在 p 和 n 掺杂层中，我们观察到在 5 至 110 K 的宽温度范围内产生单模激光，这是电流注入 T 线激光器的最高激光温度，在 100 K 时激光性能达到最佳。在具有 20 个 T 线阵列和平行 p 和 n 掺杂层的 T 线激光器中，我们获得了 2.1mA 的阈值电流和 0.9% 的差分量子效率。另一方面，我们观察到单模激光在30-70K的温度范围内激光性能在30K时变得最佳，此时我们获得了0.27mA的最低阈值电流和12%的高微分量子效率。 0.27 mA 对应于每根 T 线 14 μA 通过 Yariv 的分析方法、线长 0.5 mm、温度 30 K 和载体估算的理论值。 0.4 ns 的寿命约为每根 T 线 10 μA，我们目前的结果非常接近这一估计，并且原则上证实了量子线激光器中预测的低阈值电流、电流-。我们的电流注入 T 线激光器已实现了电压特性、电流光输出特性、阈值电流、微分量子效率及其温度依赖性。