Development of Organic FET/LD Using Self-Organized Low-Dimensional Crystals

使用自组织低维晶体开发有机 FET/LD

基本信息

批准号：
16350101
负责人：
YANAGI Hisao
金额：
$ 8.45万
依托单位：
Kobe University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2004
资助国家：
日本
起止时间：
2004 至 2005
项目状态：
已结题

项目摘要

In this study towards development of organic laser diodes (OLD), we first found that mirror-less laser actions from low-dimensional crystals of thiophene/phenylene co-oligomers (TPCO) based on stimulated resonant Raman scattering (SRRS). This light amplification effects was attributed to coherent molecular vibrations in the uniaxially oriented transition dipoles with large oscillation strength. Since the SRRS phenomena of the TPCO crystals can applicable to development of organic optical amplifiers and OLDs because of their advantages such as wide wavelength tunability with low ASE noise.In order to apply the superior light-amplification abilities of the TPCO crystals to development of OLDs, we next investigated their carrier injection and transport properties by using organic field-effect transistors (OFET) with P/N heterojunction structures. The OFET devices fabricated with co-evaporated or laminated thin films of N-type C_<60> and P-type TPCO exhibited ambipolar injection of both el … More ectrons and holes.Furthermore, we fabricated top-contact OFET devices with TPCO thin films by depositing Au source and Al:Li drain electrodes. Due to their asymmetric electrode structure with different work-function metals, those devices showed current-injected light emission under application of negative gate voltages. Microscopic observations revealed that the light emission occurred only at the edge of the drain electrode. It suggests that the holes accumulated in the TPCO channel recombine with the electrons at the drain-electrode interface. Therefore, the emission intensity is still low because the electron injection into the TPCO film is not achieved.For future progress towards development of OLDs, we should continue to find new N-type semiconducting molecules which posses high electron mobilities comparable to the hole mobility of TPCO. Furthermore, we have to improve ambipolar carrier accumulation and recombination efficiencies in the channel layer by controlling the P/N junction OFET structures. Less

在这项开发有机激光二极管（OLD）的研究中，我们首先发现基于受激共振拉曼散射（SRRS）的低维噻吩/亚苯基共聚低聚物（TPCO）晶体的无镜激光作用。这种效应归因于具有大振荡强度的单轴取向跃迁偶极子中的相干分子振动，因为 TPCO 晶体的 SRRS 现象可应用于有机物的开发。为了将TPCO晶体优异的光放大能力应用于OLD的开发中，我们接下来利用有机场研究了它们的载流子注入和传输特性具有 P/N 异质结结构的 OFET 器件由 N 型 C_<60> 和 P 型 TPCO 共蒸发或层压薄膜制成。电子和空穴的双极性注入。此外，我们通过沉积 Au 源极和 Al:Li 漏极电极，用 TPCO 薄膜制造了顶接触 OFET 器件，由于这些器件具有不同功函数金属的不对称电极结构，因此这些器件具有良好的性能。显示了在施加负栅极电压下的电流注入发光，微观观察表明发光仅发生在漏极电极的边缘，这表明空穴在TPCO沟道中积累。因此，由于没有实现电子注入TPCO薄膜，发射强度仍然很低。对于OLD的未来发展，我们应该继续寻找新的N型半导体分子。它具有与 TPCO 的空穴迁移率相当的高电子迁移率。此外，我们必须通过控制 P/N 结 OFET 结构来提高沟道层中的双极载流子积累和复合效率。