Development of group-III nitride double polar selective area growth process and fabrication of nanostructure device

III族氮化物双极选区生长工艺开发及纳米结构器件制备

• 批准号: 22760006
• 负责人: NAKANO Takayuki
• 金额: $ 2.66万
• 依托单位: Shizuoka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Young Scientists (B)
• 财政年份: 2010
• 资助国家: 日本
• 起止时间: 2010 至 2011
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-22760006/
• 关键词: エピタキシャル成長; 極性構造; GaN; ナノ構造; III族窒化物半導体; 結晶成長; 極性制御; 有機金属気相エピタキシー法; 両極性同時成長

In this study, the growth technique which controlled the polarity by the attention to the asymmetry in the crystal structure of GaN which is the wide-gap semiconductor material was developed. By examining method of processing of the substrate surface, the method for growing the polar face which differs for optional selective area was developed, because the condition of the substrate surface affected the polarity control in the crystal growth. Moreover, the phenomenon in which the polarity was replaced by the surface adsorption of the Mg atom in the growth was also examined, and it was clarified that the Mg segregation layer becomes a cause of the polarity inversion. These research results were able to expect the manufacture of the three-dimensional structure device using GaN, and the possibility of the new functional device was indicated.

在本研究中，开发了通过关注宽禁带半导体材料GaN的晶体结构的不对称性来控制极性的生长技术。通过研究衬底表面的处理方法，开发了根据可选选择区域生长极性面的方法，因为衬底表面的条件影响晶体生长中的极性控制。另外，还研究了生长时Mg原子的表面吸附而极性被置换的现象，结果明确了Mg偏析层成为极性反转的原因。这些研究成果有望利用GaN制造三维结构器件，并预示了新型功能器件的可能性。

项目成果

Development and analysis of polarity inversion GaN MOVPE by using Mg-doping

Mg掺杂极性反转GaN MOVPE的开发与分析

• 发表时间: 2011
• 作者: Mukannan Arivanandhan;Raira Gotoh;Kozo Fujiwara;Tetsuo Ozawa;Yasuhiro Hayakawa;Satoshi Uda;Takayuki Nakano
• 通讯作者: Takayuki Nakano

GaN極性反転結晶成長におけるMg表面偏析効果の解明

阐明 GaN 极性反转晶体生长中 Mg 表面偏析效应

• 发表时间: 2011
• 作者: Watanabe;H.; Matsumiya;Y.; Horio;K.; Masubuchi;Y.; Uneyama;T.;秋本雅史,山下和輝,高橋祐介,川本益揮,長瀬裕;舘毅
• 通讯作者: 舘毅

The research of the crystal growth technology which controlled the polarity of GaN

控制GaN极性的晶体生长技术的研究

• 发表时间: 2010
• 作者: 秋本雅史;山下和輝;岩澤雄太;高橋祐介;川本益揮;長瀬裕;Takayuki Nakano
• 通讯作者: Takayuki Nakano

Development of GaN inversion epitaxial growth by using Mg doping GaN MOVPE

利用Mg掺杂GaN MOVPE开发GaN反转外延生长

• 发表时间: 2011
• 作者: M.Nobori;et al;Takayuki Nakano
• 通讯作者: Takayuki Nakano

Fabrication of polarity inversion structure of GaN by using Mg-dope in MOVPE

MOVPE中Mg掺杂制备GaN极性反转结构

• 发表时间: 2010
• 作者: 田口悠一朗;大川浩作;荒木 潤;Kazuyoshi Kanamori;Tsuyoshi Tachi
• 通讯作者: Tsuyoshi Tachi