Study on control of guest-host interactions and thermoelectric properties in clathrate semiconductors

笼形半导体客主相互作用及热电性能控制研究

• 批准号: 22560708
• 负责人: ANNO Hiroaki
• 金额: $ 2.91万
• 依托单位: Tokyo University of Science, Yamaguchi
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2010
• 资助国家: 日本
• 起止时间: 2010 至 2012
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-22560708/
• 关键词: 熱電変換材料; クラスレート; 半導体物性; 省エネルギー; 熱電変換; 廃熱利用; 電気・電子材料; フォノン; ラットリング; フォノン散乱; 熱伝導率; ゼーベック係数; 有効質量; ゲスト・ホスト相互作用; 熱電材料; ゲスト・ホスト間相互作用; 結晶構造解析

New silicon clathrates, thermoelectric semiconductors, were developed by partial substitution of europium for barium on guest sites. The europium guest was found to occupy preferentially the crystallographic position 2a site in the voids in the crystal structure. The europium substitution had a significant influence on the electronic structure, resulting in an enhancement of the Seebeck coefficient due to an increased election effective mass. Further, the europium substitution caused a marked reduction in the lattice thermal conductivity due to an enhanced “rattling” scattering (resonant scattering) of phonons because the Einstein temperature of the guest atoms on the 2a site was reduced.

通过用铕部分取代客体位点上的钡，开发出新的硅包合物，发现铕客体优先占据晶体结构中空隙中的晶体学位置 2a 位点。电子结构，由于选举有效质量增加而导致塞贝克系数增强。此外，铕替代由于增强而导致晶格热导率显着降低。由于 2a 位点上的客体原子的爱因斯坦温度降低，声子发生“嘎嘎”散射（共振散射）。

项目成果

Influence of preparation conditions on thermoelectric properties of Ba8Ga16Si30 clathrate by combining arc melting and spark plasma sintering methods

电弧熔炼与放电等离子烧结相结合制备条件对Ba8Ga16Si30包合物热电性能的影响

• DOI: 10.1088/1742-6596/379/1/012007
• 发表时间: 2012
• 期刊: Journal of Physics: Conference Series
• 作者: Hiroaki Anno;Hiroki Yamada;TakahiroNakabayashi;Masahiro Hokazono and Ritsuko Shirataki
• 通讯作者: Masahiro Hokazono and Ritsuko Shirataki

Structural and Thermoelectric Properties of Sintered Silicon Clathrates: Ba8〓xEuxGa16Si30 (A=Sr, Eu; x=0〓2) Nominal Compositions

烧结硅包合物的结构和热电性能：Ba8〓xEuxGa16Si30 (A=Sr, Eu; x=0〓2) 标称成分

• 发表时间: 2010
• 作者: T. Nakabayashi;M. Hokazono;H. Anno
• 通讯作者: H. Anno

Ba_8Ga_<16>Si_<30>系クラスレート半導体の合成プロセス条件検討と熱電気的特性の評価

Ba_8Ga_<16>Si_<30>基笼形半导体的合成工艺条件研究及热电性能评价

• 发表时间: 2011
• 作者: 山田浩貴;中林貴大;外園昌弘;阿武宏明
• 通讯作者: 阿武宏明

Structural and Thermoelectric Properties of Sintered Silicon Clathrates : Ba_<8-x>A_xGa_<16>Si_<30>(A=Sr,Eu;x=0-2) Nominal Compositions

烧结硅包合物的结构和热电性能：Ba_<8-x>A_xGa_<16>Si_<30>(A=Sr,Eu;x=0-2) 标称成分

• 发表时间: 2010
• 作者: Takahiro Nakabayashi;Masahiro Hokazono;Hiroaki Anno;Yaoshuai Ba;Kunihito Koumoto
• 通讯作者: Kunihito Koumoto

Crystallographic, Thermoelectric, and Mechanical Properties of Polycrystalline Type-I Ba8Al16Si30-Based Clathrates

Ba8Al16Si30 基多晶 I 型包合物的晶体学、热电和机械性能

• DOI: 10.1007/s10853-012-6977-y
• 发表时间: 2012
• 期刊: Journal of Materials Science
• 影响因子: 4.5
• 作者: Hiroaki Anno;Masahiro Hokazono;Ritsuko Shirataki;Yuko Nagami
• 通讯作者: Yuko Nagami