Study of Quasi-ballistic Electron Transport in Silicon NanodotArray

硅纳米点阵列准弹道电子输运研究

• 批准号: 22560296
• 负责人: MORI Nobuya
• 金额: $ 2.83万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2010
• 资助国家: 日本
• 起止时间: 2010 至 2012
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-22560296/
• 关键词: 半導体; シリコン; ナノ結晶; 量子輸送; ミュレーション; トンネル; 弾道輸送; インパクトイオン化; シミュレーション

A model to describe the underlying physics of high-energy ballistic electron emission from a porous silicon diode consisting of nanometer-size Si nanodot (SiND) is presented. The model is based on an atomistic tight-binding method combined with semiclassical Monte Carlo simulation. It well reproduces essential features of experimental findings. The model is extended to be applicable to metal-semiconductor diodes consisting of SiND films. Strain effects on avalanche multiplication in a one-dimensional SiND array have been theoretically studied. Larger carrier multiplication factor is observed under compressive strain condition. Impacts of atomic disorder on avalanche multiplication have been theoretically studied. The disorder lifts the degeneracy of the energy levels and reduces the impact-ionization threshold. This leads to a larger carrier multiplication factor in the disordered SiND array compared to an ideal SiND array without disorder or strain.

提出了一个模型来描述由纳米尺寸硅纳米点 (SiND) 组成的多孔硅二极管高能弹道电子发射的基本物理原理。该模型基于原子紧束缚方法与半经典蒙特卡罗模拟相结合。它很好地再现了实验结果的基本特征。该模型扩展到适用于由 SiND 薄膜组成的金属半导体二极管。从理论上研究了一维 SiND 阵列中雪崩倍增的应变效应。在压应变条件下观察到更大的载流子倍增因子。原子无序对雪崩倍增的影响已经在理论上进行了研究。这种无序提高了能级的简并性并降低了碰撞电离阈值。与没有无序或应变的理想 SiND 阵列相比，这导致无序 SiND 阵列中的载流子倍增因子更大。

项目成果

Theory of quasiballistic transport through nanocrystalline silicon dots

• DOI: 10.1063/1.3553501
• 发表时间: 2011-02
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: N. Mori;H. Minari;S. Uno;H. Mizuta;N. Koshida

Disorder-Induced Enhancement of Impact Ionization Rate in Silicon Nanodots

无序诱导的硅纳米点碰撞电离率的增强

• 发表时间: 2012
• 作者: Ken Kanazawa;Taku Nishimura;Shoji Yoshida;Hidemi Shigekawa and Shinji Kuroda;Nobuya Mori;Nobuya Mori
• 通讯作者: Nobuya Mori

Strain effects on avalanche multiplication in a silicon nanodot array

硅纳米点阵列中雪崩倍增的应变效应

• 发表时间: 2011
• 作者: N. Mori;H. Minari;S. Uno;H. Mizuta;and N. Koshida
• 通讯作者: and N. Koshida

Ballistic electron emission from nanostructured Si dionde and its applications

纳米结构硅二极管的弹道电子发射及其应用

• 发表时间: 2013
• 作者: N. Koshida;N. Ikegami;A. Kojima;R. Mentek;B. Gelloz;and N. Mori
• 通讯作者: and N. Mori

ナノシリコン列における光励起キャリアの雪崩増倍

纳米硅阵列中光激发载流子的雪崩倍增

• 发表时间: 2011
• 作者: 森 伸也,三成英樹,宇野重康;水田 博,越田信義
• 通讯作者: 水田 博,越田信義