Current driven domain wall motions in rare earth transition metal alloys and it application toward tera bit information storage

稀土过渡金属合金中电流驱动的畴壁运动及其在太比特信息存储中的应用

• 批准号: 22360122
• 负责人: LIU Xiaoxi
• 金额: $ 12.23万
• 依托单位: Shinshu University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2010
• 资助国家: 日本
• 起止时间: 2010 至 2012
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-22360122/
• 关键词: スピントロニクス; 情報記録; 磁性細線; 磁気メモリー; 磁壁; スピントルク; 電子材料; スピンデバイス

One of the fundamentals in spintronics is that the magnetic domain walls can be driven by spin polarized current. Such phenomena indicate that the magnetic reversal can be achieved by current directly rather than by magnetic field. However, the critical current to drive the domain walls is as large as 1012A/m2in normal magnetic materials. In this research, we found the critical current density can be decrease to 1/100 by using rear earth transition alloys with perpendicular magn etic anisotropy. We have investigated the films composition, magnetic anisotropy, and its effect on critical current density. We have also developed a new process to measure spin polarization in the wires. Our results show that rear earth transition alloys with perpendicular magnetic anisotropy are prominent candidate for next generation information storage devices with extremely high density.

自旋电子学的基本原理之一是磁畴壁可以由自旋极化电流驱动。这种现象表明磁反转可以直接通过电流而不是磁场来实现。然而，普通磁性材料驱动磁畴壁的临界电流高达1012A/m2。在这项研究中，我们发现通过使用具有垂直磁各向异性的稀土过渡合金可以将临界电流密度降低到1/100。我们研究了薄膜的成分、磁各向异性及其对临界电流密度的影响。我们还开发了一种新工艺来测量导线中的自旋极化。我们的结果表明，具有垂直磁各向异性的稀土过渡合金是下一代极高密度信息存储设备的主要候选者。

项目成果

Ni/TbFeCo/Ni 三層膜における磁気抵抗効果

Ni/TbFeCo/Ni三层薄膜的磁阻效应

• 发表时间: 2010
• 作者: 清水浩一郎;Mikinari Mukai;田島圭,林和延,劉小晰,森迫昭光
• 通讯作者: 田島圭,林和延,劉小晰,森迫昭光

Domain Wall Pinning Sites Introduced by Focused Ion Beam in TbFeCo Film

聚焦离子束在 TbFeCo 薄膜中引入的畴壁钉扎位点

• DOI: 10.1109/tmag.2012.2199741
• 发表时间: 2012
• 期刊: IEEE TRANSACTIONS ON MAGNETICS
• 影响因子: 2.1
• 作者: Songtian Li;Taro Amagai;Xiaoxi Liu;Akimitsu Morisako
• 通讯作者: Akimitsu Morisako

Current-Induced Domain Wall Motion in TbFeCo Wires With Perpendicular Magnetic Anisotropy

• DOI: 10.1109/tmag.2010.2042576
• 发表时间: 2010-06-01
• 期刊: IEEE TRANSACTIONS ON MAGNETICS
• 影响因子: 2.1
• 作者: Li, Songtian;Nakamura, Hajime;Morisako, Akimistu
• 通讯作者: Morisako, Akimistu

Domain wall motion induced by low current density in TbFeCo wire with perpendicular magnetic anisotropy

垂直磁各向异性 TbFeCo 线中低电流密度引起的畴壁运动

• 发表时间: 2010
• 期刊: J.Mag.Soc.Jpn
• 作者: S.Li;H.Nakamura;T.Kanazawa;X.Liu;A.Morisako
• 通讯作者: A.Morisako

Current driven domain wall motion in rare-earth transition metal nanowires

稀土过渡金属纳米线中电流驱动的畴壁运动

• 发表时间: 2012
• 作者: N. Yokoyama;K. Senda;M. Iima;N. Hirai;Akimitsu Morisako
• 通讯作者: Akimitsu Morisako