Research on hetero-structure growth by a supersonic source beams and an atomic layer epitaxy.

超声源束和原子层外延异质结构生长研究。

基本信息

批准号：
14350012
负责人：
OZEKI Masashi
金额：
$ 8.26万
依托单位：
University of Miyazaki
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2002
资助国家：
日本
起止时间：
2002 至 2005
项目状态：
已结题

项目摘要

Basic research on the hetero-structure growth was carried out for various materials including semiconductors, insulating materials, and metals. It is important for the growth of a high quality hetero-interface to precisely control the surface migration of the precursors and the nucleus in the first stage of the hetero-growth. It was found that the control of these parameters was difficult for the conventional growth method such as molecular beam epitaxy (MBE) or metal-organic chemical vapor deposition (MOCVD). Therefore, a new growth method using "a supersonic source beam method" and "an atomic layer epitaxy" was developed for the precise growth control. This new method made it possible to independently control the surface migration of precursors from other growth parameters such as growth temperature. By using this growth method, we could produce an extremely high density of nuclei (three order higher than the conventional growth) in the first stage of the hetero-growth.We could select the kind of nuclei useful for the hetero-growth and control its density in the first stage of the growth. After this process, we grew the hetero-structures including semiconductor/semiconductor hetero-structures and semiconductor/metal hetero-structures by the atomic layer epitaxy (Pulsed-Jet-Epitaxy). The atomic layer epitaxy enabled us to control the layer-by-layer growth at an atomic level, which was found for growing a high quality hetero-structure. Furthermore, we could control the dislocation and the relaxation of the interface strain by the atomic layer epitaxy. From these basic research, we could grow high quality hetero-structures for various material systems.

对半导体、绝缘材料、金属等多种材料进行了异质结构生长的基础研究。在异质生长的第一阶段，精确控制前驱体和核的表面迁移对于高质量异质界面的生长非常重要。研究发现，分子束外延（MBE）或金属有机化学气相沉积（MOCVD）等传统生长方法很难控制这些参数。因此，为了精确的生长控制，开发了一种使用“超音速源束法”和“原子层外延”的新生长方法。这种新方法使得可以根据其他生长参数（例如生长温度）独立控制前体的表面迁移。通过使用这种生长方法，我们可以在异质生长的第一阶段产生极高密度的核（比常规生长高三个数量级）。我们可以选择对异质生长有用的核种类并控制其生长第一阶段的密度。在此过程之后，我们通过原子层外延（脉冲喷射外延）生长了异质结构，包括半导体/半导体异质结构和半导体/金属异质结构。原子层外延使我们能够在原子水平上控制逐层生长，这有助于生长高质量的异质结构。此外，我们可以通过原子层外延来控制位错和界面应变的弛豫。通过这些基础研究，我们可以为各种材料系统培育出高质量的异质结构。