Research on nitride based semiconductor power devices

氮化物基半导体功率器件的研究

• 批准号: 21760241
• 负责人: IROKAWA Yoshihiro
• 金额: $ 3万
• 依托单位: National Institute for Materials Science
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Young Scientists (B)
• 财政年份: 2009
• 资助国家: 日本
• 起止时间: 2009 至 2010
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-21760241/
• 关键词: 電気・電子材料; 窒化物半導体; ヘテロ接合; AlGaN/GaN; ヘテロ構造; AlGaN; GaN; ショットキー構造

Nitride-based materials and devices were fabricated and characterized in order to realize power devices with low loss and structure the associated semiconductor physics. The obtained results are described as follows. First, the correlation between defects in the AlGaN/GaN hetero-interfaces and device performances was characterized using deep level optical spectroscopy. As a result, malfunction of devices was found to relate to particular defect levels in the AlGaN/GaN hetero-interfaces. Second, influence of hydrogen on the device performances was characterized. As a result, property of the metal/semiconductor interfaces was found to play a critical role in device performances.

氮化物基材料和器件的制造和表征是为了实现低损耗功率器件并构建相关的半导体物理结构。所得结果描述如下。首先，使用深能级光谱来表征 AlGaN/GaN 异质界面中的缺陷与器件性能之间的相关性。结果发现，器件的故障与 AlGaN/GaN 异质界面中的特定缺陷水平有关。其次，表征了氢对器件性能的影响。结果发现，金属/半导体界面的特性在器件性能中发挥着关键作用。

项目成果

Low-frequency capacitance-voltage study of hydrogen interaction with Pt-AlGaN/GaN Schottky barrier diodes, Phys.

氢与 Pt-AlGaN/GaN 肖特基势垒二极管相互作用的低频电容电压研究，Phys。

• 发表时间: 2009
• 期刊: Status Solidi RRL 3
• 作者: Y.Irokawa;N.Matsuki;M.Sumiya;Y.Sakuma;T.Sekiguchi;T.Chikyo;Y.Sumida;Y.Nakano
• 通讯作者: Y.Nakano

Low-frequency capacitance-voltage study of hydrogen interaction with Pt-AlGaN/GaN Schottky barrier diodes

• DOI: 10.1002/pssr.200903204
• 发表时间: 2009-10-01
• 期刊: PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
• 影响因子: 2.8
• 作者: Irokawa, Yoshihiro;Matsuki, Nobuyuki;Nakano, Yoshitaka
• 通讯作者: Nakano, Yoshitaka

Band Gap States in AlGaN/GaN Hetero-Interface Probed by Deep-Level Optical Spectroscopy

通过深能级光谱探测 AlGaN/GaN 异质界面的带隙状态

• 发表时间: 2009
• 作者: 櫻井岳暁;馬場暁久;Ronit Prakash;間瀬一彦;秋本克洋;米倉健志;Y.Nakano
• 通讯作者: Y.Nakano

Hydrogen-induced change in the electrical properties of metal-insulator-semiconductor Pt-GaN diodes

• DOI: 10.1063/1.3496625
• 发表时间: 2010-11-01
• 期刊: JOURNAL OF APPLIED PHYSICS
• 影响因子: 3.2
• 作者: Irokawa, Yoshihiro

Photovoltaic Action in Polyaniline/n-GaN Schottky Diodes

• DOI: 10.1143/apex.2.092201
• 发表时间: 2009-09-01
• 期刊: APPLIED PHYSICS EXPRESS
• 影响因子: 2.3
• 作者: Matsuki, Nobuyuki;Irokawa, Yoshihiro;Sumiya, Masatomo
• 通讯作者: Sumiya, Masatomo