Development of advanced ferroelectric random access memory devices in more extensive region

在更广泛的领域开发先进的铁电随机存取存储器件

• 批准号: 21760233
• 负责人: KAWAE Takeshi
• 金额: $ 2.91万
• 依托单位: Kanazawa University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Young Scientists (B)
• 财政年份: 2009
• 资助国家: 日本
• 起止时间: 2009 至 2010
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-21760233/
• 关键词: 強誘電体不揮発性メモリ; 非鉛強誘電体; ワイドギャップ半導体; ダイヤモンド; BiFeO3; 強誘電体メモリ; 強誘電体; 不揮発性メモリ

As an integration of Pb-free ferroelectrics with wide-gap semiconductors, (Pr, Mn)-codoped BiFeO_3 (BPFM)/B-doped diamond layered structure was fabricated on a diamond substrate. B-doped diamond films were homoepitaxially grown on diamond substrate using microwave plasma-enhanced chemical vapor deposition. Then, BPFM thin films were deposited on the B-doped diamond layer by pulsed laser deposition. BPFM thin films were polycrystalline with random orientations on the B-doped diamond layer. Fabricated heterostructure showed saturated P-E hysteresis curves with 2P_r : 90℃/cm^2 and 2E_c : 740kV/cm for maximum electric field of 900kV/cm at room temperature. P-E hysteresis curves without influences of leakage current were observed even when the measurement temperature was increased to 200 ℃

作为无铅铁电体与宽禁带半导体的集成，在金刚石基底上同质外延生长了(Pr,Mn)共掺杂BiFeO_3(BPFM)/B掺杂金刚石层状结构。然后，通过脉冲激光沉积在B掺杂金刚石层上沉积BPFM薄膜。在B掺杂金刚石层上制备的随机取向的多晶在室温下的最大电场为900kV/cm时表现出饱和的P-E磁滞曲线，2P_r：90℃/cm^2和2E_c：740kV/cm。即使测量温度升至 200 ℃，仍可观察到漏电流的影响