Development of highly sensitive analysis technique for semiconductor process induced contamination impurities

开发半导体工艺引起的污染杂质的高灵敏度分析技术

• 批准号: 11694157
• 负责人: TAKAI Mikio
• 金额: $ 9.91万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 1999
• 资助国家: 日本
• 起止时间: 1999 至 2001
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-11694157/
• 关键词: ultra high density integrated circuit; Process contaminated impurity; ion probe; localized analysis with ultra high sensitivity; contamination analysis technique; heavy metal contamination; TOF-RBS analysis technique; FIB-RBS; 超微量プロセス汚染元素; 電界放出電子

The object of this study was to establish localized analysis techniques with ultra high sensetivity for process contaminated impurities using the same samples for both localized ion probe techniques with ultra high sensitivity being developed in Japan and destructive wafer-scale analysis techniques being used in Germany, which is a key issue for future ultra high density integrated circuit development. The following results were obtained through Japan and German collaboration.(1) The trade-off between non-destructive localized analysis techniques using ion micro and nano probes with FIB-RBS and TOF-RBS developed in Japan and destructive wafer-scale analysis techniques such as SIMS, VPD-TXRF and VPD-AAS used in Germany was clarified for analysis steps.(2) Analysis of contaminated impurities from a wafer-level to device levels has been performed to identify each of the impurities and to measure quantatively. Further applications of micro and nano probes to shallow dopat profiling and iastability of SOI MOSFET have been developed.(3) Minority carrier mapping and diffusion constant mapping in a wafer were successfully conpared with contaminated impurity mapping data using localized ion beam analyses.(4) Fundamental basis for localized analysis techniques with ultra high sensitivity was established through the collaboration.

本研究的目的是针对日本正在开发的超高灵敏度局部离子探针技术和德国正在使用的破坏性晶圆级分析技术，使用相同的样品，建立对工艺污染杂质具有超高灵敏度的局部分析技术。是未来超高密度集成电路发展的关键问题。通过日本和德国的合作，取得了以下成果：(1)日本开发的采用FIB-RBS和TOF-RBS离子微纳米探针的非破坏性局部分析技术与破坏性晶圆级分析技术之间的权衡明确了德国使用的SIMS、VPD-TXRF、VPD-AAS的分析步骤。(2)从晶圆级到器件级对污染杂质进行分析，对每种杂质进行识别并定量测定。微米和纳米探针在 SOI MOSFET 的浅掺杂分布和稳定性方面的进一步应用已经得到开发。(3) 使用局部离子束分析成功地将晶圆中的少数载流子映射和扩散常数映射与受污染的杂质映射数据进行比较。(4)通过此次合作，为超高灵敏度局部分析技术奠定了基础。

项目成果

M.Takai: ""Direct Observation of Floating Body Effect in SOI MOS FET using Nuclear Microprobe""Proc. of the 13th Intem. Conf. on Ion Implantation Technology (IEEE). 305-310 (1999)

M.Takai：“使用核微探针直接观察 SOI MOS FET 中的浮体效应”Proc。

Y.K. Park, M. Takai, C. Lehrer, L. Frey, and H. Ryssel: "Investigation of Cu Films by Focused Ion Beam induced Deposition Using Nuclear Microprobe"Nucl. Instr. and Methods. B158. 493-498 (1999)

Y.K.

M. Takai, K. Nakayama, H. Takaoka, T. Iwamatsu, Y. Yamaguchi, S. Maegawa, T. Nisnimura, A. Kinomura and Y. Horino: "Direct Observation of Floating Body Effect in SOI MOS FET using Nuclear Microprobe"the Proc. Of the ECS 9th International Symposium on Sili

M. Takai、K. Nakayama、H. Takaoka、T. Iwamatsu、Y. Yamaguchi、S. Maekawa、T. Nisnimura、A. Kinomura 和 Y. Horino：“使用核微探针直接观察 SOI MOS FET 中的浮体效应

M. TaKai, O. Yavas, C. Ochiai, Y. K. Park: "Nuclear Microprobe Analysis of Beam-Processed Miniaturized Structures by Focused Ion and Electron beams"the 2nd Conf. Intern. Union Microbeam Analysis Societies, Kailua-Kona, Hawaii, 9 - 13 July, 2000, Inst. Phy

M. TaKai、O. Yavas、C. Ochiai、Y. K. Park：“聚焦离子束和电子束对束加工微型结构的核微探针分析”第二届会议。

Y.K.Park: "Investigation of Cu Films by Focused Ion Beam Induced Deposition Using Nuclear Microprobe"Nucl.Instr. and Methods. B158. 493-498 (1999)

Y.K.Park：“使用核微探针通过聚焦离子束诱导沉积研究铜膜”Nucl.Instr。