Development of Ion Scattering and Recoiling Spectroscopy for In Situ Monitoring of Semiconductor Surface Processes in Gas Phase Atmosphere

气相气氛中半导体表面过程原位监测的离子散射和反冲光谱技术的发展

基本信息

批准号：
11305006
负责人：
OURA Kenjiro
金额：
$ 23.64万
依托单位：
Osaka University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
1999
资助国家：
日本
起止时间：
1999 至 2001
项目状态：
已结题

项目摘要

Thin film growth or etching in gas phase atmosphere is often performed as a semiconductor surface process in various device fabrication procedures, where chemical vapor deposition (CVD) or gas source molecular beam epitaxy (GSMBE) is typically adopted. Although the interaction of gas phase particles (atoms, molecules, ions, plasma) with the surface of materials is a key process in such types of fabrication, its atomic-scale mechanism is not fully elucidated. This is in part due to the lack of appropriate surface analytical techniques feasible in gas phase atmosphere. Conventionally, several restricted techniques such as surface photo-absorption (SPA) are used for in situ observation of surface processes under gas phase atmosphere. However, these techniques cannot provide information on the surface composition such as the amount of surface hydrogen even though hydrogen atoms are often involved in surface processes.Coaxial impact-collision ion scattering spectroscopy (CAICISS) and time-of-flight elastic recoil detection analysis (TOF-ERDA) have proven to be useful in in situ monitoring of surface structure and composition, in particular, for the determination of the amount of surface hydrogen atoms. In this project, we have developed a novel ion scattering and recoiling spectrometer for real-time monitoring of surface processes in gas phase atmosphere based on conventional CAICISS/TOF-ERDA. By setting up a differential pumping system between the CAICISS/TOF-ERDA and film growth chamber, the apparatus is suitable for in situ observation of the surface processes in the pressure regime up to 10^<-4> Torr. In order to demonstrate the performance of this apparatus, we have applied it to real-time monitoring of Ge thin film growth on a Si(001) surface in atomic hydrogen (H) atmosphere. The morphology of Ge thin films and H coverage on the growth front during the growth in H atmosphere were successfully observed.

气相气氛中的薄膜生长或蚀刻通常作为各种器件制造过程中的半导体表面工艺进行，其中通常采用化学气相沉积（CVD）或气源分子束外延（GSMBE）。尽管气相粒子（原子、分子、离子、等离子体）与材料表面的相互作用是此类制造中的关键过程，但其原子尺度机制尚未完全阐明。这部分是由于缺乏在气相气氛中可行的适当表面分析技术。传统上，诸如表面光吸收（SPA）等几种受限技术用于气相气氛下的表面过程的原位观察。然而，尽管氢原子经常参与表面过程，但这些技术无法提供有关表面成分的信息，例如表面氢的量。同轴碰撞碰撞离子散射光谱（CAICISS）和飞行时间弹性反冲检测分析（ TOF-ERDA）已被证明可用于原位监测表面结构和成分，特别是测定表面氢原子的数量。在本项目中，我们基于传统的CAICISS/TOF-ERDA开发了一种新型离子散射和反冲光谱仪，用于实时监测气相大气中的表面过程。通过在CAICISS/TOF-ERDA和薄膜生长室之间设置差动泵系统，该装置适合在高达10^-4Torr的压力范围内对表面过程进行原位观察。为了展示该装置的性能，我们将其应用于原子氢（H）气氛中Si（001）表面Ge薄膜生长的实时监测。成功观察到了在 H 气氛中生长过程中 Ge 薄膜的形貌和生长前沿的 H 覆盖情况。