Dynamic Behavior of Radiation-induced Defects in Silicon Crystal and Its Application to Semiconductor Technology

硅晶体辐射缺陷的动态行为及其在半导体技术中的应用

• 批准号: 10650013
• 负责人: SADOH Taizoh
• 金额: $ 2.3万
• 依托单位: KYUSHU UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1998
• 资助国家: 日本
• 起止时间: 1998 至 1999
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-10650013/
• 关键词: Silicon; Ion-beam; Rradiation-induced defect; Silicidation; Crystallization; Oxidation

Dynamic behaviors of defects induced by irradiation with low-energy ions have been investigated, and the energy released during relaxation of the defects has been utilized for semiconductor processing at low temperatures.First, relaxation characteristics of the defects were evaluated by using pulsed ion-beams. Second, in order to demonstrate the low-temperature processing technology which utilized energy released during the relaxation of defects, the growth characteristics for the ion-assisted oxidation was systematically studied, and a guideline for the optimum processing conditions was presented. The results are summarized as follows:1. Defects induced by irradiation with argon ions at 25 ke V in 600 nm silicon crystal films recover within 1 μ sec.2. Defects induced by irradiation with argon ions at 25 ke V in 25 nm cobalt-disilicide films recover within 200 μ sec.3. In the ion-assisted oxidation in an argon and oxygen mixed ECR plasma, atomic vibrations are exited near the substrate surface, which enhances oxidation. The irradiation damage in the oxide films is reduced by applying positive bias to the substrate. It has been demonstrated that high-quality oxide films can be formed by the ion-assisted oxidation at 130℃.

研究了低能离子辐照引起的缺陷的动态行为，并将缺陷弛豫过程中释放的能量用于低温半导体加工。首先，利用脉冲离子束评估缺陷的弛豫特性其次，为了展示利用缺陷弛豫过程中释放的能量的低温加工技术，系统地研究了离子辅助氧化的生长特性，并提出了最佳加工条件的指导。总结如下： 1． 600 nm硅晶体薄膜中25 ke V氩离子辐照引起的缺陷在1μ秒内恢复。 2． 25 nm二硅化钴薄膜中25 ke V氩离子辐照引起的缺陷恢复。在 200 μ 秒内。3. 在氩气和氧气混合 ECR 等离子体中的离子辅助氧化中，原子振动在衬底表面附近激发，从而增强氧化，通过在衬底上施加正偏压可以减少氧化膜的辐照损伤。 130℃。

项目成果

S. Matsuo, T. Sadoh, H. Nakashima, and T. Tsurushima: ""Ion-assisted oxidation with ECR plasma : Effects of ion-irradiation""Technical Report of IEICE. ED99-23. 87-94 (1999)

S. Matsuo、T. Sadoh、H. Nakashima 和 T. Tsurushima：““ECR 等离子体离子辅助氧化：离子辐照的影响””IEICE 技术报告。

T. Sumita: "Ion-beam modification of TiO_< 2> film to multilayered photocatalyst"Nucl. Instrum. & Methods B. 148. 758-761 (1999)

T. Sumita：“将 TiO_<2> 膜离子束改性为多层光催化剂”Nucl。

T. Tsurushima, T. Sadoh, H. Nakashima, and T. Kanayama: ""Defect0-active Processing: A New Skill in Defining Elemental Device Structures""Proc. of The Int. Symposium on Future of Intellectual Integrated Electronics. 73-82 (1999)

T. Tsurushima、T. Sadoh、H. Nakashima 和 T. Kanayama：““缺陷 0 主动处理：定义基本设备结构的新技能””Proc。

A. Matsushita, Y.-Q. Zhang, T. Sadoh, and T. Tsurushima: ""Characterization of CoSiィイD22ィエD2 Gate MOS Structure Formed by Ion Irradiation""Res. Rep. Information Sci. and Electrical Eng. of Kyushu Univ.. Vol.4, No.1. 47-52 (1999)

A. Matsushita、Y.-Q. 张、T. Sadoh 和 T. Tsurushima：“离子辐照形成的 CoSiD22 栅极 MOS 结构的表征”Res. 九州大学信息科学与电气工程。 4、第 47-52 号（1999）

T.Sumita: "Ion-beam modification of TiO_2 film to multilayered photocatalyst"Nucl. Instrum. & Methods B. 148. 758-761 (1999)

T.Sumita：“TiO_2 薄膜的离子束改性为多层光催化剂”Nucl。