Developement of new hydrogen analysis method by combining classical methods and its application to the H/Si systems

结合经典方法开发新的氢分析方法及其在H/Si体系中的应用

• 批准号: 08555009
• 负责人: OURA Kenjiro
• 金额: $ 13.06万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 1996
• 资助国家: 日本
• 起止时间: 1996 至 1997
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08555009/
• 关键词: Surface Hydrogen; Interface Hydrogen; Ion Beam Analysis; Sputtering; multi-hydrogen analysis

We have reported that epitaxial growth mode of thin metallic films on the Hydrogen-terminated Si surfaces were slightly different from that on the clean Si surfaces. Our subject on this research project supported by a Grant-in-Aid for Scientific Research is to develop a new hydrogen analysis technique by combined the classical methods and apply to the real hydrogen-silicon systems. The new findings are as follows.(1) Combining the low energy electron diffraction (LEED) and the low energy ion scattering (ISS) containing detection of the absolute volume of hydrogen using the recoil detection system causes the powerful tool to investigate the hydrogen induced epitaxy. We also used the STM for the ex-situ observation of surface morphology.(2) Not only MBE methods but also sputtering methods were applied to make metal epitaxial films on Si substrates to investigate the role of hydrogen on the films.(3) Initial stage of 2-dimensional superlattice induced by specific materials such as Ag, Pb and In changes to 3-dimensional intrinsic cluster growth after the Hydrogen termination.These results cause the key of better understanding of modification of heteroepitaxy by the Hydrogen termination.

我们报道了氢封端硅表面上金属薄膜的外延生长模式与干净硅表面上的外延生长模式略有不同。我们在这个由科学研究资助金支持的研究项目中的主题是结合经典方法开发一种新的氢分析技术并应用于实际的氢硅系统。新发现如下：(1)结合低能电子衍射(LEED)和低能离子散射(ISS)，利用反冲检测系统检测氢的绝对体积，成为研究氢诱导氢的有力工具。外延。我们还利用STM对表面形貌进行了异位观察。(2)不仅采用MBE方法，还采用溅射方法在Si衬底上制备金属外延薄膜，以研究氢对薄膜的作用。(3)初始由Ag、Pb和In等特定材料诱导的二维超晶格阶段在氢终止后转变为3维本征团簇生长。这些结果成为更好地理解氢终止异质外延改性的关键。

项目成果

A.A.Saranin 他6名: "STM tip-induced diffusion of In atoms on the Si(III)√×√-In surface" Physical Review B. 56. 7449-7454 (1997)

A.A.Saranin 和其他 6 人：“STM 尖端诱导的 In 原子在 Si(III)√<3>×√<3>-In 表面上的扩散”物理评论 B. 56. 7449-7454 (1997)

A.A.Saranin 他8名: "Structural model for the Si(111)-4×1-In reconstruction" Physical Review B condensed matter. 56 no.3. 1017-1020 (1997)

A.A.Saranin 等 8 人：“Si(111)-4×1-In 重建的结构模型”《物理评论 B 凝聚态物质》56 no.3 (1997)。

A.A.Saranin et.al.: "Atructural model for the Si (111)-4*1-In reconstruction" Physical Review. B56. 1017-1020 (1997)

A.A.Saranin 等人：“Si (111)-4*1-In 重建的结构模型”物理评论。

M.Watamori 他3名: "A New method for the detection of native oxide on Si with conbined use of ^O(α,α)^O resonance and channeling" Applied Surface Science. 113/114. 403-407 (1997)

M. Watamori 和其他 3 人：“结合使用 ^<16>O(α,α)^<10>O 共振和沟道来检测 Si 上天然氧化物的新方法”应用表面科学 113/114。 403-407 (1997)

K.Oura 他4名: "Atomic-hydrogen-induced Ag clusterformation on Si(111)-√×√-Ag surface observed by scanning tunneling microscopy" J.Vac.Sci.Technol.B14. 988-991 (1996)

K.Oura 和其他 4 人：“通过扫描隧道显微镜观察到 Si(111)-√<3>×√<3>-Ag 表面上原子氢诱导的 Ag 簇形成”J.Vac.Sci.Technol.B14。 -991 (1996)