Surface Structure and State Analysis by Using Anble-resolved Photo-electron Diffraction

使用安布尔分辨光电子衍射进行表面结构和状态分析

• 批准号: 08455026
• 负责人: KOSHIKAWA Takanori
• 金额: $ 4.35万
• 依托单位: Osaka Electro-Communication University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1996
• 资助国家: 日本
• 起止时间: 1996 至 1997
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08455026/
• 关键词: photoelectron diffraction; hydroden terminated silicon surface; Cu; Si crystal growth; high resolution depth analysis; 表面構造; シリコン(111); 水素終端

High resolution analyzer for photo-electron diffraction analysis which have an ability to study the surface structure and state was designed and made. It was applied to the research of surface structure analysis and the thin film formation process.It the design of the analyzer, the trajectories of electrons in the analyzer including the edge effect of electrodes were simulated by the computer and the best values of the shape of the analyzer was obtained. The best angle of the analyzer is not 90ﾟ but 89.1ﾟ. The analyzer was made by using of the above value. The results of the exmeriments show that energy resolution is 4.2x10^<-3>. It value is almost comparable of the designed one. The angle resolution was 0.5ﾟ which was also comparable to the designed one. The following is the results which were obtained by using the above mentioned equipment.Thin film formation of Cu on the hydrogen-terminated silicon surfaces was investigated. Cu atoms can migrate very easily on the hydrogenterminated silicon surfaces when the sample temperature is kept between 300 and 400ﾟ. Its migration distance is quite long like 20-30 um. After the long migration of Cu atoms, these atoms form islands whose size is almost 20nm and these size is almost same. It predicts that these ilands could be used quntum dots for the devices. This type of method might be new techniques for the dot formation.The very complicated surface structure Cu/Si (111) "5x5" incommensurate structure was analyzed and obtained the detailed distance of each layr of Cu ans Si. This is alos new result.

设计制作了一种能够研究表面结构和状态的高分辨率光电子衍射分析仪，应用于表面结构分析和薄膜形成过程的研究。通过计算机模拟了分析仪中电子的轨迹，包括电极的边缘效应，得到了分析仪形状的最佳值，分析仪的最佳角度不是90°，而是。利用该值制作的分析仪的能量分辨率为4.2x10^<-3>，与设计的角度分辨率0.5°基本相当。也与设计的结果相当。以下是使用上述设备获得的结果。研究了氢封端硅表面上铜薄膜的形成，铜原子可以很容易地在硅表面上迁移。当样品温度保持在300°C到400°C之间时，氢封端的硅表面的迁移距离相当长，为20-30μm。经过Cu原子的长时间迁移，这些原子形成了尺寸接近20nm的岛。同样它预测这些岛可以用于器件的量子点这种方法可能是点形成的新技术。非常复杂的表面结构Cu/Si (111)。对“5x5”不通约结构进行了分析，得到了Cu与Si各层的详细距离，这也是一个新的结果。

项目成果

越川孝範・安江常夫: "Effect of hydrogen of Cu formation on Si (111)" Surface Science. (印刷中). (1997)

Takanori Koshikawa 和 Tsuneo Yasue：“Cu 形成的氢对 Si (111) 的影响”表面科学（出版中）。

T.Koshikawa, T.Yasue: "Surface Structure and Hydrogen Termination Effect of Cu/Si(111)" J.Surf.Anal.3. 259-267 (1997)

T.Koshikawa、T.Yasue：“Cu/Si(111) 的表面结构和氢终止效应”J.Surf.Anal.3。

K.Yamashita, T.Koshikawa, et al.: "High Depth Resdution Analysis of Cu/Si(111)"5x5"structure with MEIS" Nuclear Instruments and Methods. (印刷中). (1998)

K.Yamashita、T.Koshikawa 等人：“使用 MEIS 对 Cu/Si(111)”5x5”结构进行高深度还原分析”核仪器和方法（出版中）。

越川孝範・安江常夫: "Surface Structure and Hydrogen Termination Effect of Cu/Si(111)" J. Surface Analysis. (印刷中). (1997)

Takanori Koshikawa 和 Tsuneo Yasue：“Cu/Si(111) 的表面结构和氢终止效应”J. 表面分析（出版中）。

安江 常夫、吉井 啓之、越川 孝範: "Cu/Si(111)成長における水素終端効果" 表面科学. 17. 401-405 (1996)

Tsuneo Yasue、Hiroyuki Yoshii、Takanori Koshikawa：“Cu/Si(111) 生长中的氢终止效应”表面科学 17. 401-405 (1996)。