Study on MBE technologies and optical properties of novel optical functional GeC/Si thin -epitaxial films and nanocrystal assemblies.

新型光学功能GeC/Si薄膜及纳米晶组件的MBE技术及光学性能研究。

• 批准号: 18360010
• 负责人: NUNOSHITA Masahiro
• 金额: $ 11.21万
• 依托单位: Nara Institute of Science and Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2006
• 资助国家: 日本
• 起止时间: 2006 至 2007
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-18360010/
• 关键词: Bro-nanoprocess; Semiconductor Nanocrvstals; 2-D superlattice; Ultra-thin-Si-film nanomask; Moleculer beam epitaxv(MBE); Embedded solid phase epitaxy(SPE); IV-eroup lieht emitting diode; Very low-energy ion implantation; アークプラズマガン; 半導体ナノ結晶; 発光デバ

As an aim at Si-compatible light emitting or quantum information devices, we have developed new nanotechnologies of forming precisely 2-D nano-crystal (NC) assemblies of GeC, β-FeSi_2 or Si on Si (100) substrates by fusing unique bottom-up-type and top-down-type nanotechnologies such as molecular beam epitaxy (MBE), solid phase epitaxy (SPE) or ion-implantation method, respectively. The microscopic structural and optical properties of their NC assemblies were evaluated. The brief results of this research project are as follows;(1) For the fused nanotechnology, a novel 'nanomask' of an ultra-thin (〜2 nm thick) Si film with 2D-assembled via-holes 7±2 nm in diameter on a Si (100) wafer was developed by means of a self-assembled bio-nanoprocess using proteins 'ferritin'. It was used successfully for conventional MBE, SPE and low-energy ion-implantation techniques.(2) Through very small and almost 2D-ordered via-holes of the Si nanomask on the Si (100) substrate, very small-size and 2-D ass … More embled Ge_<1-x>C_x NCs were grown by solid-source MBE with an arc-plasma gun as a C molecular beam source. The MBE-grown Ge1_<-x>Cx NCs were obtained up to a substitutional C content of x=3.2%. In the photoluminescence (PL) spectra at 7K, a PL peak appeared around 1.3 μm due to the quantum confinement effect. We could not make clear the origin of the extremely large band bowing so far.(3) 2-D Si-NC assemblies in SiO_2 thin films were synthesized by using very-low-energy Si^+ ion-implantation (down to 0.6keV) and sequential annealing with a Nd:YAG pulsed laser. As a result, almost ordered Si-NC assemblies with very small and uniform size (3.0±0.3 nm in diameter) and inter-particle separation (5 to 6 nm) were obtained by the transcription of the Si nanomask pattern. The PL spectra of Si-NCs implanted at 0.6keV were observed with a peak of 2lleV and an FWHM of 78 nm.(4) Very smallsize and high-density β-FeSi_2 NC assemblies were formed on a Si (100) substrate using an embedded solid-phase epitaxy (SPE) and bio-nanoprocess with proteins 'ferritin' containing Fe_2O_3 cores 7 nm in diameter. The β-FeSi_2 NCs were grown by SPE at 500-800℃ for 1 hr in an ultra-high vacuum chamber after embedded in an amorphous Si thin film. The β-FeSi_2 NC assemblies were almost 2D-ordered with a uniform diameter 6.3±0.3 nm and a density 6.2×10^ (11) dots/cm^2, and their PL spectra with a peak 0.91 eV were obtained Less

作为与硅兼容的发光或量子信息器件的目标，我们开发了新的纳米技术，通过融合独特的底部，在硅（100）衬底上形成精确的二维纳米晶体（NC）组件。向上型和自上而下型纳米技术分别如分子束外延（MBE）、固相外延（SPE）或离子注入方法。评估了其数控组件的微观结构和光学特性，该研究项目的简要结果如下：（1）对于融合纳米技术，一种新型的超薄（约2纳米厚）硅薄膜“纳米掩模”。使用蛋白质“铁蛋白”通过自组装生物纳米工艺在 Si (100) 晶圆上开发出直径为 7±2 nm 的二维组装通孔，并已成功用于传统方法。 MBE、SPE 和低能离子注入技术。(2) 通过 Si (100) 衬底上的 Si 纳米掩模的非常小且几乎二维有序的通孔，实现非常小尺寸和二维的 Ass … More embed Ge_1-xC_x NCs 通过固体源 MBE 生长，采用电弧等离子体枪作为 C 分子束源。在7K的光致发光（PL）光谱中，由于量子限制效应，我们无法弄清楚极大的带弯曲的起源。 (3)采用极低能量Si^+离子注入(低至0.6keV）和使用 Nd:YAG 脉冲激光进行连续退火，结果获得了尺寸非常小且均匀（直径 3.0±0.3 nm）和颗粒间分离（5 至 6 nm）的几乎有序的 Si-NC 组件。通过转录 Si 纳米掩模图案获得了在 0.6keV 下注入的 Si-NC 的 PL 光谱，峰值为 2lleV，半高宽为78 nm。(4) 使用嵌入式固相外延 (SPE) 和生物纳米工艺，使用含有 Fe_2O_3 核心的蛋白质“铁蛋白”，在 Si (100) 基板上形成非常小尺寸和高密度的 β-FeSi_2 NC 组件 7 nm β-FeSi_2 NCs 包埋后在超高真空室中于 500-800℃ 条件下生长 1 小时。 β-FeSi_2 NC 组件几乎是二维有序的，直径为 6.3±0.3 nm，密度为 6.2×10^ (11) 点/cm^2，其 PL 光谱的峰值为 0.91。 eV 获得较少

项目成果

フェリチンタンパク質を用いたナノマスクの作製

使用铁蛋白制造纳米掩模

• 发表时间: 2006
• 作者: K. Usami;K. Sakamoto;N. Tamura;A. Sugimura;陸川政弘;T. Taishi;中間勇二
• 通讯作者: 中間勇二

Position-controlled Si nanocrystals in a SiO_2 thin film using a novel amorphous Si ultra-thin-film "nanomask" due to a bio- nanoprocess for low-energy ion implantation

SiO_2 薄膜中的位置控制硅纳米晶体，采用新型非晶硅超薄膜“纳米掩模”，采用生物纳米工艺进行低能离子注入

• 发表时间: 2008
• 期刊: Appl. Phys. Express 1
• 作者: Y. Nakama;S. Nagamachi;J. Ohta;M. Nunoshita
• 通讯作者: M. Nunoshita

MBE-grown Ge1-xCx nanocrystals by using a novel bio-nanoprocess due to protein 'ferritin'

利用蛋白质“铁蛋白”的新型生物纳米工艺，MBE 生长 Ge1-xCx 纳米晶体

• 发表时间: 2007
• 作者: Y. Nakama;J. Ohta;M. Nunoshita
• 通讯作者: M. Nunoshita

Position-controlled Si nanocrystals in a SiO_2 thin film using a novel amorphous Si ultra-thin-film "nanomask" due to a bio-nanoprocess for low-energy ion implantation

SiO_2 薄膜中的位置控制硅纳米晶体，采用新型非晶硅超薄膜“纳米掩模”，采用生物纳米工艺进行低能离子注入

• 发表时间: 2008
• 期刊: Appl. Phys. Express 1
• 作者: Y. Nakama;et. al.
• 通讯作者: et. al.

バイオナノプロセスと埋め込みSPE法を用いた高密度β-FeSi_2ナノ結晶の形成

利用生物纳米工艺和嵌入式SPE方法形成高密度β-FeSi_2纳米晶

• 发表时间: 2007
• 作者: D. Guo;K. Sakamoto;K. Miki;S. Ikeda;and K. Saiki;皆川亨介
• 通讯作者: 皆川亨介