Study of Film Growth Mechanism and Development of Coaxial Line Type MPCVD System with Longitudinal Magnetic Field

薄膜生长机理研究及纵向磁场同轴线式MPCVD系统研制

基本信息

批准号：
07650383
负责人：
KATO Isamu
金额：
$ 1.28万
依托单位：
Waseda University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1995
资助国家：
日本
起止时间：
1995 至 1996
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07650383/
关键词：
microwave plasma D.C.magnetic field electron density a-Si : H plasma stabilization high speed deposition spatial after-grow plasma depression of charged particle diffusion 縦磁界同軸線路形マイクロ波プラズマCVD 電子密度の高濃度化水素プラズマの安定化プラズマパラメータの計測 S

项目摘要

The purposes of this study are [1] to plan discharge stabilization and high concentration of the electron density because of depressing diffusion of plasma toward the discharge tube wall by applying a D.C.magnetic field parallel to the electric field of microwave in the coaxial-line type microwave plasma fabrication system, moreover [2] to perform CVD in low temperature and stable plasma by connecting a film deposition chamber which is designed not to enter both D.C.magnetic field and microwave power in the film deposition chamber and to generate spatial after-grow plasma which is not supplied microwave power.In the year of 1995, using Ar gas or N_2 gas which is relatively easy to discharge, mainly we have executed discharge experiments, and it was clarified that plasma which is stable under low gas pressure and high electron density is obtained though discharge is nustable and the electron density decreases in conventional no magnetic field system. Moreover, the same experiment for H_2 gas which is relatively difficult to discharge was executed, and the expectation that stable and high electron density plasma can be obtained for H_2 gas was cleared, then the initial purpose [1] was completed.In the year 1996, the experiments were executed with notice for mainly film deposition, it was clarified that higher film deposition was performed without deterioration of films compared with the case of no magnetic field when Ar gas or N_2 gas was used. Moreover, when H_2 gas was used it was clarified that stable and high electron density plasma was obtained by application of the magnetic field of about 1400 Gauss and high speed film deposition was performed at 7 */s though a deposition the of a-Si : H film was very low for H_2 gas pressure because the electron density is in no magnetic field, then the purposes [1] and [2] were completed.

本研究的目的是[1]通过在同轴线型中施加与微波电场平行的直流磁场来抑制等离子体向放电管壁的扩散，从而实现放电稳定化和电子密度的高集中化。微波等离子体制造系统，此外[2]通过连接薄膜沉积室在低温和稳定的等离子体中进行CVD，该薄膜沉积室被设计成不进入薄膜沉积室中的直流磁场和微波功率，并产生空间后生长等离子体不提供微波炉1995年，我们主要采用比较容易放电的Ar气或N_2气体进行了放电实验，明确了在低气压、高电子密度下，通过放电可以得到稳定的等离子体。在传统的无磁场系统中，电子密度降低。并且对放电相对困难的H_2气体进行了同样的实验，明确了H_2气体能够获得稳定的高电子密度等离子体的期望，从而完成了最初的目的[1]。 1996年可知，主要是针对成膜而进行的实验，可知与使用Ar气或N_2气时无磁场的情况相比，能够在不使膜劣化的情况下进行更高的成膜。此外，当使用H_2气体时，表明通过施加约1400高斯的磁场获得了稳定的高电子密度等离子体，并且通过沉积a-Si以7*/s进行高速薄膜沉积：由于在无磁场的情况下，H膜对于H_2气压非常低，从而达到了[1]和[2]的目的。