Study on effect of discharge frequency on particle growth in high frequency plasma.

高频等离子体中放电频率对粒子生长影响的研究

• 批准号: 07458093
• 负责人: WATANABE Yukio
• 金额: $ 1.02万
• 依托单位: KYUSHU UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1995
• 资助国家: 日本
• 起止时间: 1995 至 1996
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07458093/
• 关键词: particles; dust; discharge frequency dependence; silane plasma; high frequency plasma; coagulation; plasma CVD; パーティクル; 放電周波数; VHFプラズマ

Discharge frequency dependence of growth processes of particles in silane rf discharges have been studied in a size range above a few nanometers as parameters of discharge frequency. A seies of experiments have given the following results : particles nucleate and grow around the plasma/sheath boundary by the rf electrode for all discharge frequencies ; increasing the discharge frequency under a constant power, a growth rate of particles in the rapid growth phase decreases, while they begin to be observed earlier after the discharge initiation due to the increase in their density ; a density of particles of -10nm in size is comparable to or even higher than that of ions, and hence almost of them are neutral. These results can not be explained by the conventional thermal coagulation model, suggesting that high energy electrons above several 10's eV play an important role to ionize a part of neutral particles in their rapid growth. In order to explain properly most of these exprimental features, a particle coagulation model is proposed.

硅烷射频放电中颗粒生长过程的放电频率依赖性已经在几纳米以上的尺寸范围内作为放电频率的参数进行了研究。一系列实验给出了以下结果：在所有放电频率下，粒子在射频电极的作用下在等离子体/鞘层边界周围成核和生长；在恒定功率下增加放电频率，快速生长阶段的颗粒生长速率降低，但由于密度增加，在放电开始后较早开始观察到颗粒； -10nm大小的粒子密度与离子相当甚至更高，因此几乎都是中性的。这些结果无法用传统的热凝固模型来解释，这表明数十电子伏特以上的高能电子在中性粒子快速生长过程中电离部分中性粒子方面发挥着重要作用。为了正确解释大多数这些实验特征，提出了颗粒混凝模型。

项目成果

Yukio Watanabe: "Contribution of short lifetime radicals to growth of particles in SiH_4 HF discharges and effects of particles on deposited films" Journal of Vacuum Science & Technology.

Yukio Watanabe：“短寿命自由基对 SiH_4 HF 放电中粒子生长的贡献以及粒子对沉积薄膜的影响”真空科学杂志

渡辺征夫: "プラズマCVD半導体プロセスにおける微粒子の発生と測定" 日本エアロゾル学会. 10. 13-19 (1995)

Yukio Watanabe：“等离子体 CVD 半导体工艺中细颗粒的产生和测量”日本气溶胶学会 10. 13-19 (1995)。

Masaharu Shiratani: "Two dimensional spatial profiles of size and density of particulates grown in rf silane plasmas" IEEE Trans.Plasma Sci.24,1. 99-100 (1996)

Masaharu Shiratani：“射频硅烷等离子体中生长的颗粒尺寸和密度的二维空间分布”IEEE Trans.Plasma Sci.24,1。

Hiroharu Kawasaki: "Study on Growth Processes of Particles in rf SiH_4 Plasmas" Proc.3rd Int.Conf.Reactive Plasma/14th Symp.Plasma Processes. 3. 351-352 (1997)

Hiroharu Kawasaki：“rf SiH_4 等离子体中粒子生长过程的研究”Proc.3rd Int.Conf.Reactive Plasma/14th Symp.Plasma Processes。

Hiroharu Kawasaki: "Discharge frequency dependence of particulate growth in high frequency silane plasmas" Applied Physics Letters. 67. 3880-3882 (1995)

Hiroharu Kawasaki：“高频硅烷等离子体中颗粒生长的放电频率依赖性”应用物理快报。