Control of surface states for III-V semiconductor quantum structures and its application to novel optical devices

III-V族半导体量子结构表面态控制及其在新型光学器件中的应用

• 批准号: 07455017
• 负责人: HASEGAWA Hideki
• 金额: $ 4.74万
• 依托单位: HOKKAIDO UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1995
• 资助国家: 日本
• 起止时间: 1995 至 1996
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07455017/
• 关键词: quantum well; quantum wire; compound semiconductors; interface control; surface and interface states; surface passivation; silicon interface control layr; photoluminescence

The purpose of this study is to investigate the interaction mechanism between surface states and confined levels in III-V compound semiconductor quantum structures and to control the surface properties by use of ultrathin silicon interface control layr (SiICL) for fabrication of novel optical devices. The main results obtained are listed below :(1) It was found that the photoluminescence (PL) intensity from the near-surface quantum well (OW) with the surface-to-well distance of 5nm, was reduced by a factor of 1000 as compared with that from the reference QW located deeply inside. We revealed that this phenomenon is caused by strong interaction between the quantized states in near-surface QW and surface states. Acomplete recovery of PL intensity was achieved by use of Si-ICL based passivation technique.(2) X-ray photoelectron spectroscopy analysis revealed that there were no oxidized and nitrided phase of semiconductor surface at the passivation film/semiconductor interfaces.(3) By applying the Si-ICL passivation method, a nearly complete recovery of PL intensity was achieved with an observed maximum recovery factor of 400 for the InGaAs quantum wires. The quantum wires passivated with SiICL showed strong PL intensity even at room temperature.(4) The Si-ICL passivation technique was successfully applied to passivation of side walls of InGaAs quantum wires fabricated by wet etching process.(5) Detailed computer simulation pointed out that a clear passivation effects can be explained by substantial reduction of surface states by Si-ICL based passivation technique

本研究的目的是研究 III-V 族化合物半导体量子结构中表面态和限制能级之间的相互作用机制，并通过使用超薄硅界面控制层 (SiICL) 来控制表面性质，以制造新型光学器件。主要研究结果如下：(1)发现面距为5nm的近表面量子阱(OW)的光致发光(PL)强度降低了1000倍，如下所示：与位于内部深处的参考 QW 进行比较。我们发现这种现象是由近表面量子波中的量子态与表面态之间的强相互作用引起的。采用基于Si-ICL的钝化技术实现了PL强度的完全恢复。(2)X射线光电子能谱分析表明，钝化膜/半导体界面处不存在半导体表面的氧化和氮化相。(3)应用 Si-ICL 钝化方法，InGaAs 量子线的 PL 强度几乎完全恢复，观察到的最大恢复因子为 400。用SiICL钝化的量子线即使在室温下也表现出很强的PL强度。(4)Si-ICL钝化技术成功应用于湿法刻蚀工艺制备的InGaAs量子线侧壁的钝化。(5)详细的计算机模拟指出明显的钝化效果可以通过基于 Si-ICL 的钝化技术大幅降低表面态来解释

项目成果

S.Suzuki: "A Novel Passivation Technology of InGaAs Surfaces Using Si Interface Control Layer and Its Application to Field Effect Transistor.," Solid State Electron.38. 1679-1683 (1995)

S.Suzuki：“使用Si界面控制层的InGaAs表面的新型钝化技术及其在场效应晶体管中的应用。”，Solid State Electron.38。

H.Hasegawa: "Metal-Semiconductor Interfaces" Ohmsha, (1995)

H.Hasekawa：“金属-半导体界面”Ohmsha，（1995）

B.X.Yang: ""Scanning Tunneling Microscope Study of (001) InP Surface Prepared by Gas Source Molecular Beam Epitaxy"" Japanese Journal of Applied Physics. 35. 1267-1272 (1996)

B.X.Yang：“气源分子束外延制备（001）InP表面的扫描隧道显微镜研究”，日本应用物理学杂志。

S.Kasai: ""Fabrication and Characterization of Novel Lateral Surface Superlattice Structure Utilizing Schottky Barrier Height Control by Doped Silicon Interface Control Layers"" Japanese Journal of Applied Physics.35. 1340-1347 (1996)

S.Kasai：“利用掺杂硅界面控制层控制肖特基势垒高度的新型横向表面超晶格结构的制造和表征”，《日本应用物理学杂志》35。

H.Hasegawa: "Evolution Mechanism of Nearly-Pinning Platinum/N-Type Indium Phosphide Interface with a High Schottky Barrier Height by In-Situ Electrochemical Process" J. Vac. Sci. Technol.B15(4)(印刷中). (1997)

H. Hasekawa：“通过原位电化学过程实现高肖特基势垒高度的近钉扎铂/N 型磷化铟界面的演化机制”J. Vac。1997 年。 ）