Epitaxial Growth of AIGaN Using Selective Area Gmwth Technique

使用选择性区域 Gmwth 技术外延生长 AlGaN

• 批准号: 18560010
• 负责人: MIYAKE Hideto
• 金额: $ 2.39万
• 依托单位: Mie University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2006
• 资助国家: 日本
• 起止时间: 2006 至 2007
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-18560010/
• 关键词: Nitride Semiconductor; metal-organic vapor phase epitaxy; selective area growth; GaN; AIN; In-site; AlGaN; ファセット; 貫通転位; TEM観察

It is extremely difficult to grow high-quality, thick A1GaN with a high AIN molar fraction on GaN, because the AIGaN cracks under the large in-plane tensile stress induced. In this study, crack-free high Al-content AIGaN with low dislocation density was grown on (SAG) GaN without coalescence of the wing GaN, which was firstly deposited on an AIN/sapphire template and the structural property of A1GaN was also investigated.SAG-GaN grown on AIN/sapphire template by metal-organic vapor phase epitaxy(MOVPE) was used as a substrate. Crack-free A1GaN with an Al content of 0.51 was successfully fabricated on selective-area-growth (SAG) GaN. lb avoid coalescence of the wing GaN, the growth process of SAG GaN was accurately controlled by in-situ monitoring. TEM measurement demonstrated that the threading dislocations(TDs) were disappeared in SAG GaN layer and appeared in the interface of SAG GaN and AIGaN. Furthermore, TDs in A1GaN layer are mainly pure edge-type dislocation and the TDs density of A1GaN layer was about 1-3×108 cm^<-2>

在 GaN 上生长具有高 AlN 摩尔分数的高质量、厚的 AlGaN 是极其困难的，因为 AlGaN 在大面内拉伸应力的作用下会产生裂纹。在没有翼状 GaN 聚结的情况下，在 (SAG) GaN 上生长密度，该翼状 GaN 首先沉积在 AlN/蓝宝石模板上，并且还研究了 AlGaN 的结构特性。SAG-GaN 生长采用金属有机气相外延（MOVPE）在AlN/蓝宝石模板上成功地制备了Al含量为0.51的无裂纹AlGaN，避免了Al的聚结。通过原位 TEM 测量精确控制 SAG GaN 的生长过程，证明 SAG GaN 层中的穿透位错（TD）消失。并且出现在SAG GaN和AlGaN的界面处，并且A1GaN层中的TD主要是纯刃型位错，并且A1GaN层的TD密度约为1-3×108cm^-2>。

项目成果

Blue emission from InGaN/GaN hexagonal pyramid structures

InGaN/GaN 六角锥结构的蓝光发射

• 发表时间: 2007
• 期刊: Superlattices and Microstructures 41
• 作者: H. Miyake;K. Nakao and K. Hiramatsu
• 通讯作者: K. Nakao and K. Hiramatsu

HVPE法によるGaN・AIN成長の現状と課題(招待講演)

使用HVPE方法生长GaN/AIN的现状和挑战（特邀报告）

• 发表时间: 2007
• 作者: 平松和政;劉 玉懐;三宅秀人
• 通讯作者: 三宅秀人

Growth of High AIN Molar Fraction AlGaN on Selective-Area-Growth GaN

高 AIN 摩尔分数 AlGaN 在选择性区域生长 GaN 上的生长

• 发表时间: 2007
• 作者: H. Miyake;N. Masuda;K. Hiramatsu
• 通讯作者: K. Hiramatsu

Structural and optical properties of Si-doped AIGaN/AIN multiple quantum wells grown by MOVPE

MOVPE 生长的硅掺杂 AIGaN/AlN 多量子阱的结构和光学性质

• 发表时间: 2007
• 期刊: Physica Status Solidi (c)4,(7)
• 作者: D. Li;T. Katsuno;M. Aoki;H. Miyake;K. Hiramatsu;T. Shibata
• 通讯作者: T. Shibata

Optical Characterization of AIGaN grown on incline-grooved AIN epilayer

斜槽 AlN 外延层上生长的 AIGaN 的光学表征

• 发表时间: 2006
• 作者: H. Miyake;A. Ishiga;N. Umeda;T. Shibata;M. Tanaka;K. Hiramatsu
• 通讯作者: K. Hiramatsu