Physics of Hetero-Epitaxial Growth onto the hydrogen terminated Si surface under the low temperature condition

低温条件下氢封端硅表面异质外延生长物理

基本信息

批准号：
06402025
负责人：
OURA Kenjiro
金额：
$ 22.91万
依托单位：
Osaka University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
1994
资助国家：
日本
起止时间：
1994 至 1996
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-06402025/
关键词：
Surface Hydrogen Ion beam analysis STM Epitaxy metal Si interface エピタキシ-

项目摘要

We have reported that epitaxial growth mode of thin metallic films on the Hydrogen-terminated Si surfaces were slightly different from that on the clean Si surfaces. Our subject on this research project supported by a Grant-in-Aid for Scientific Research is to clarify or to get a key to understand the mechanism of the role of Hydrogen to thin film growth. We observed the phenomena atomically with use of newly introduced scanning tunneling microscopy (STM). The new findings are as follows.(1) To get the information of role of substrate temperature for the hydrogen termination onto the Si surfaces, we performed the low temperature experiments by a high energy ion beam method. At low temperature of about 100K,Hydrogen plays a role of etching source for the Si surfaces rather than preventive source of the Si surfaces. As a result, good epitaxial thin films could not be obtained under the condition of low temperature adsorption.(2) Initial stage of 2-dimensional superlattice induced by specific materials such as Ag, Pb and In changes to 3-dimensional intrinsic cluster growth after the Hydrogen termination.(3) Through the change of 3-dimensional clusters from the 2-dimensional superlattices, bare Si areas are produced, where Si atoms form structures of 1-dimensional, 2-dimensional or and so on depending the initial 2-dimensional super lattice structures.These results cause the key of better understanding of modification of hetero-epitaxy by the Hydrogen termination.

我们报道了氢封端硅表面上金属薄膜的外延生长模式与干净硅表面上的外延生长模式略有不同。我们在这个由科学研究补助金支持的研究项目中的主题是澄清或获得理解氢对薄膜生长的作用机制的关键。我们使用新推出的扫描隧道显微镜（STM）以原子方式观察了这一现象。新发现如下：(1)为了了解衬底温度对硅表面氢终止的作用，我们采用高能离子束方法进行了低温实验。在100K左右的低温下，氢气对Si表面起到蚀刻源的作用，而不是Si表面的预防源。结果，在低温吸附条件下无法获得良好的外延薄膜。(2)Ag、Pb、In等特定材料诱发的二维超晶格初始阶段转变为三维本征团簇生长。 (3)通过二维超晶格转变为三维簇，产生裸硅区域，其中硅原子根据初始条件形成一维、二维等结构。二维超晶格结构。这些结果成为更好地理解氢终止异质外延改性的关键。