Establishment of innovational materials surface treatment / modification technology with using supercritical cluster plasma fluid

利用超临界团簇等离子体流体建立创新材料表面处理/改性技术

基本信息

批准号：
17360349
负责人：
TERASHIMA Kazuo
金额：
$ 9.79万
依托单位：
The University of Tokyo
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2005
资助国家：
日本
起止时间：
2005 至 2006
项目状态：
已结题

项目摘要

(A) We generated micrometer-scale discharge plasma in high-pressure H_2O and Xe up to supercritical conditions. In our previous paper, we reported the existence of two peculiar features in the breakdown voltages under high-pressure CO_2. The first one was the downward shift at the right-hand side of Paschen's curve above about 2.5 MPa, and the second one was the drastic decrease in the breakdown voltages near the critical point. We have experimentally confirmed that these features are also observed in H_2O and Xe, even though there are some differences among these materials. Our theoretical fitting involving a density fluctuation term ED agrees well with the experimental results, especially for Xe. We suppose that these unique features are brought about by decreases in the electron-to-particle cross section □, ionization potential □_i, and secondary electron coefficient □', and changes in the discharge space.(B) We diagnosed the inner state of the supercritical CO_2-DBD (dielectric bar … More rier discharge) plasma by micro-Raman spectroscopy. From Raman band of CO_2 near 1388 cm' inside the plasma, the large-wavenumber shift, which correspond to a decrease of CO_2 density was not observed. It was also found that the Raman band obtained from CO_2 with the plasma showed a local shift near the critical point, comparing with other high-pressure condition.(C) Under an optimal condition, dense Cu-carbon composite films were successfully deposited by dielectric barrier discharge method in sc-CO_2 and Ar. Diagnostics of DBD generated in scCO_2 and scAr was conducted. From V-I measurement, the negative charge density of our SCF plasma was estimated to be more than 10^<18> cm^<-3>, which shows that our SCF plasma has a high density of ions and electrons, which are required for obtaining a highly reactive plasma. Cu/C films were successfully obtained and its dependence on power frequency and applied voltage was studied. Cu content of films obtained in an scCO_2 and scAr was about 10 % and 60 % maximum, respectively. This result suggests the advantage of Ar in terms of the fineness of synthesized materials. The deposition rate was about 300 nm/min in scCO_2 and 190 nm/min in scAr. These results suggest the potential of an SCF plasma processing for realization of high-speed metal film deposition. Moreover, strip-line microwave micro plasma was also generated, in which substrate conditions, such as temperature and distance from plasma, can be controlled independently of plasma. Less

(A)我们在高压H_2O和Xe直至超临界条件下产生了微米级放电等离子体。在我们之前的论文中，我们报道了高压CO_2下击穿电压的两个特殊特征。在大约 2.5 MPa 以上，帕邢曲线右侧出现向下移动，第二个是在临界点附近击穿电压急剧下降，我们通过实验证实，这些特征也观察到。 H_2O 和 Xe，尽管这些材料之间存在一些差异，但我们涉及密度波动项 ED 的理论拟合与实验结果非常吻合，特别是对于 Xe，我们认为这些独特的特征是由电子对的减少带来的。 -粒子截面□，电离势□_i，二次电子系数□'，以及放电空间的变化。(B)我们诊断了超临界CO_2-DBD（介质棒）的内部状态… 更多 rier 放电）等离子体的显微拉曼光谱。从等离子体内部 1388 cm' 附近的 CO_2 拉曼谱带，没有观察到与 CO_2 密度降低相对应的大波数位移。与其他高压条件相比,用等离子体从CO_2获得的能带在临界点附近出现了局部偏移。(C)在最佳条件下,采用介质阻挡放电法成功沉积了致密的Cu-碳复合薄膜。 sc-CO_2和Ar.对scCO_2和scAr中产生的DBD进行了诊断，根据V-I测量，我们的SCF等离子体的负电荷密度估计超过10^<18>cm^<-3>，这表明：我们的SCF等离子体具有高密度的离子和电子，这是获得高反应性等离子体所必需的，并且研究了其对电源频率和所获得的薄膜的Cu含量的依赖性。 scCO_2 和 scAr 的最大含量分别约为 10% 和 60%。该结果表明 Ar 在合成材料的细度方面具有优势。scCO_2 中的沉积速率约为 300 nm/min，scAr 中的沉积速率约为 190 nm/min。结果表明，SCF 等离子体处理具有实现高速金属薄膜沉积的潜力，此外，还可以产生带状线微波微等离子体，其中基底条件（例如温度和距等离子体的距离）可以改变。独立于等离子体进行控制。