SiOx thin film formation by highly-activated electrons in plasma and application of the deposited SiOx to gas barrier films

等离子体中高活化电子形成SiOx薄膜及其在阻气膜中的应用

基本信息

批准号：
17350106
负责人：
INAGAKI Norihiro
金额：
$ 9.86万
依托单位：
Shizuoka University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2005
资助国家：
日本
起止时间：
2005 至 2006
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-17350106/
关键词：
Pulse-modulated plasma sine-modulated plasma SiOx plasma polymer Oxygen gas barrier Water vapor gas barrier Poly(ethylene naphthalate)Sputtering パルスプラズマ SiOx プラズマポリマー

项目摘要

Plasma polymerization of a mixture of tetramethoxysilane and oxygen and sputtering of SiO_2 process were used for deposition of SiOx thin films on poly(ethylene naphthalate), PEN, film surfaces. The oxygen and water vapor gas barrier properties for the SiOx-deposited PEN films were evaluated.(1) The chemical composition and oxygen and water vapor gas barrier properties were strongly depended on what plasma was used for SiOx deposition. The oxygen and water vapor gas barrier properties for the SiOx-deposited PEN films was sputtering > continuous mode plasma > pulse-mode plasma sine-mode plasma(2) SiOx-deposited PEN films with an oxygen permeation rate of 0.14 cc/m^2-day at 40℃ at 90%RH, and a water vapor permeation rate of 0.006 g/m^2-day at 40℃ at 90%RH were formed from the sputtering of SiO_2 process.(3) What was key factor in the permeation process of oxygen and water vapor through PEN films was analyzed using the time-lag method. The analysis showed that the solution process of oxygen and water vapor on the PEN film surfaces rather than the diffusion process through the PEN films was an important factor in the permeation process. The solution coefficient of water vapor is 2 orders higher than that of oxygen. This conclusion shows that surface layer of the PEN films should be coated with materials with low solution coefficient of water vapor.

四甲氧基硅烷和氧的混合物的血浆聚合和SIO_2过程的溅射用于沉积在聚（乙烯萘），笔，膜表面上的Siox薄膜。评估了SIOX沉积的笔膜的氧气和水蒸气气势屏障性能。（1）化学成分和氧气和水蒸气气屏屏障的性质在很大程度上取决于用于SIOX沉积的等离子体。 Siox沉积的笔膜的氧气和水蒸气屏障特性是溅射>连续模式等离子体>脉冲模式等离子体血浆正弦模式血浆（2）Siox siox沉积的笔膜，氧气渗透速率为0.14 cc/m^2天，在90％g的2天，并在90％rr^2-degile时通过SIO_2工艺的溅射形成了40°rh，在90％RH中形成。（3）使用时差方法分析了通过笔膜的氧气和水蒸气渗透过程中的关键因素。分析表明，笔膜上的氧气和水蒸气的溶液过程，而不是通过笔膜的扩散过程是渗透过程中的重要因素。水蒸气的溶液芯比氧气高2个阶。该结论表明，笔膜的表面层应涂在水蒸气的低溶液芯的材料上。