Analyses of Photo-induced Surface Reaction Processes during Plasma Sputtering

等离子体溅射过程中光致表面反应过程的分析

基本信息

批准号：
17340174
负责人：
HAMAGUCHI Satoshi
金额：
$ 9.28万
依托单位：
Osaka University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2005
资助国家：
日本
起止时间：
2005 至 2006
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-17340174/
关键词：
plasma etching reactive sputtering ultraviolet molecular dynamics simulation Monte-Carlo simulation ion beam 紫外線照射

项目摘要

The goal of this project is to clarify the role of photon injections (especially those of ultra violet : UV) into the material surface during reactive plasma sputtering. It has been empirically known that, in reactive plasma sputtering (i.e., reactive ion etching) processes, photon injections significantly affect sputtering properties, but detailed mechanisms of the photo-induced non-equilibrium surface chemical reactions have been hardly known. In the present project, we have analyzed surface reaction mechanisms of various etching processes to clarify how photon injections can affect etching properties, using molecular dynamics (MD) simulations and a mass-selected ion beam injection system. Especially in this fiscal year, which is the final year of the present project, we have worked on the following topics : (1) Modeling of interatomic potential functions for excited atoms and interaction of photons and atoms in the material for MD simulations. (2) Examination of synergetic effects of ion beams and photon injections, based on the simultaneous injection experiments of a mono-energetic ion beam obtained from the mass selected ion beam injection system and light from a UV light source attached to the ion beam system. Through such research, we have evaluated effects of UV on reactive ion etching (i.e., plasma sputtering) and clarified various characteristics of surface reactions during reactive ion etching processes for materials widely used in the industry, such as silicon dioxide and some organic polymers.

该项目的目标是阐明反应等离子体溅射过程中光子（尤其是紫外线：UV）注入材料表面的作用。根据经验，在反应等离子体溅射（即反应离子蚀刻）过程中，光子注入显着影响溅射性能，但光诱导非平衡表面化学反应的详细机制却鲜为人知。在本项目中，我们利用分子动力学 (MD) 模拟和质量选择离子束注入系统，分析了各种蚀刻工艺的表面反应机制，以阐明光子注入如何影响蚀刻特性。特别是在本财年，即本项目的最后一年，我们致力于以下主题：（1）对激发原子的原子间势函数以及材料中光子与原子的相互作用进行MD模拟的建模。 (2)基于从质量选择离子束注入系统获得的单能离子束和来自连接到离子束系统的UV光源的光的同时注入实验，检查离子束和光子注入的协同效应。通过此类研究，我们评估了紫外线对反应离子蚀刻（即等离子体溅射）的影响，并阐明了工业中广泛使用的材料（例如二氧化硅和一些有机聚合物）反应离子蚀刻过程中表面反应的各种特征。

项目成果

期刊论文数量（0）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

Control of atomic layer degradation on Si substrate,

控制硅衬底上原子层退化，

DOI：
发表时间：
2007
期刊：
J. Vac. Sci. Tech. A (印刷中)
影响因子：
0
作者：
Y.Nakamura;T.Tatsumi;S.Kobayashi;K.Kugimiya;T.Harano;A.Ando;T.Kawase;S.Hamaguchi;S.Iseda
通讯作者：
S.Iseda

Molecular dynamics simulation analyses on injection angle dependence of SiO_2 sputtering yields by fluorocarbon beams

氟碳束射入角度对SiO_2溅射产率依赖性的分子动力学模拟分析