Control of spin motion in DOS-controlled single-wailed carbon nanotubes

DOS控制的单壁碳纳米管中自旋运动的控制

• 批准号: 17310060
• 负责人: SHIRAISHI Masashi
• 金额: $ 9.74万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2005
• 资助国家: 日本
• 起止时间: 2005 至 2007
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-17310060/
• 关键词: carbon nanotube; spintronics; ナノチューブ; スピンエレクトロニクス; 物性実験; メゾスコピック系; 単層カーボンナノチューブ; 電子散乱・スピン散乱; バリスティック伝導; 極性制御; 分子内包ドーピング; 電界効果型トランジスタ; 磁気抵抗効果

The purpose of this study is (1) stable control of density of states (DOS) in single-walled carbon nanotubes (SWNTs) in order to control injected carriers, (2) injection of polarized spins into DOS-controlled SWNTs. In order to achieve these two purposes, we have set 3 important milestones, that is, (a) increase of carrier injection efficiency in SWNT-based field effect transistors, (b) band engineering of SWNTs as a channel layer in FETs by carrier doping (c) spin injection into such SWNTs from ferromagnetic electrodes. Concerning the milestone (a) and (b), we have succeeded in fabricating SWNT-FETs with high performance and also polarity controlled SWNT-FETs using Tetracyano-p-quinodimethane (TCNQ) and polyethireneimine. Concerning the milestone (c), first we fabricated single-electron transistors using SWNT and estimated scattering length of injected carriers (electron and hole) to be 200-300 nm. Next we replaced electrodes from non-magnet to ferromagnet in order to achieve spin injection. In addition, we newly introduced a non-local 4-terminal magnetoresistance measurement method for obtaining reliable results. As a result, we have observed hysteresis in resistance in SWNT spin valve with 4 electrodes at 3.8 K. The spin coherent length was estimated to be about 90 nm.

本研究的目的是（1）稳定控制单壁碳纳米管（SWNT）中的态密度（DOS）以控制注入的载流子，（2）将极化自旋注入DOS控制的SWNT中。为了实现这两个目的，我们设定了3个重要的里程碑，即（a）提高基于SWNT的场效应晶体管的载流子注入效率，（b）通过载流子掺杂将SWNT作为FET中沟道层的能带工程(c) 从铁磁电极自旋注入此类单壁碳纳米管。关于里程碑 (a) 和 (b)，我们成功地使用四氰基对醌二甲烷 (TCNQ) 和聚乙烯亚胺制造了高性能的 SWNT-FET 以及极性控制的 SWNT-FET。关于里程碑 (c)，首先我们使用 SWNT 制造单电子晶体管，并估计注入载流子（电子和空穴）的散射长度为 200-300 nm。接下来我们将电极从非磁体更换为铁磁体，以实现自旋注入。此外，我们新引入了非局部四端磁阻测量方法以获得可靠的结果。结果，我们在 3.8 K 下观察到具有 4 个电极的 SWNT 自旋阀的电阻滞后。自旋相干长度估计约为 90 nm。

项目成果

Ambipolar single electron transistors side-contacted single-walled carbon nanotubes

双极单电子晶体管侧接触单壁碳纳米管

• 发表时间: 2005
• 期刊: Chemical Physics Letters 417
• 作者: K.Matsuoka;et al.
• 通讯作者: et al.

Surface potential analyses of single-walled carbon nanotube/metal interface

单壁碳纳米管/金属界面的表面电位分析

• 发表时间: 2007
• 期刊: Journal of Applied Physics 101
• 作者: M. Shiraishi;K. Takebe;K. Saito;N. Toda and H. Kataura
• 通讯作者: N. Toda and H. Kataura

Non-local 4-terminal magnetoresistance measurement in SWNTs

单壁碳纳米管中的非局部四端磁阻测量

• 发表时间: 2007
• 作者: M.;Shiraishi
• 通讯作者: Shiraishi

An investigation of spin current in single-walled carbon nanotubes

单壁碳纳米管中自旋电流的研究

• 发表时间: 2007
• 作者: M. Shiraishi;et. al.
• 通讯作者: et. al.

Band structure modulation by carrier doping in random-network carbon nanotube transistors

• DOI: 10.1063/1.2219389
• 发表时间: 2006-07
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: Shuichi Nakamura;Megumi Ohishi;M. Shiraishi;T. Takenobu;Y. Iwasa;H. Kataura