Doping by single Ion Implantation and its application to solid state materials and devices.

单离子注入掺杂及其在固态材料和器件中的应用。

基本信息

批准号：
05101003
负责人：
OHDOMARI Iwao
金额：
$ 143.36万
依托单位：
Waeda University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Specially Promoted Research
财政年份：
1993
资助国家：
日本
起止时间：
1993 至 1996
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-05101003/
关键词：
Single Ion Single Ion Implantation FIB point defect material control positron annihilation ultrafine structure surface structural phase transition 物性制御

项目摘要

Development of the single ion implantation (SII) was conducted for the purpose of implanting accurate number of dopant ions one by one into ultra fine semiconductor structures. By evaluating the number of implanted ions and detection efficiency of the single ion incidence, the SII has been proven to be effective in suppressing the fluctuation in dopant number 50% less than the conventional ion implantation.Immunity of VLSIs against transient malfunction induced by single ion irradiation was investigated using single ion microprobe technique, and sensitive site in the VLSIs and mechanism of the malfunction have been identified.Damages introduction with ion irradiation and subsequent anisotropic etching have yielded Si nano-wires successfully.The enhanced gold plating was observed at the nano-modified silicon surface using SII.The temperature dependence of Schottky barrier I-V characteristics revealed that near surface damages in Si introduced by ion irradiation reduced the Schottky barrier height due to fermi level position at the metal-semiconductor interface.Ion implantation induced defects were investigated by positron annihilation technique and the relationship between their depth profile and ion species was clearly established.For the next stage intense positron beam, high efficiency positron moderators were developed together with the use of ^<60>C source. At present, the result that guarantees the thousand times high efficiency moderation was obtained.Processes of oxidation, H_2 desorption and adsorption of alkaline metals on Si surfaces have been clarified using molecular orbital calculations. Energy changes along the 7x7 formation steps and the effect of oxygen atoms was calculated.Dynamic growth steps of the DAS domains were precisely observed in-situ using high temperature STM.Isolated DAS domains nucleated or annihilated with a single stacking fault triangle as a building unit and the critical nucleus size for growth was revealed.

单离子注入（SII）的开发是为了将精确数量的掺杂剂离子一一注入到超精细半导体结构中。通过评估注入离子的数量和单离子入射的检测效率，SII已被证明可以有效地抑制掺杂剂数量的波动，比传统离子注入减少50%。 VLSI对单离子引起的瞬态故障的抗扰度使用单离子微探针技术研究了辐照，并确定了 VLSI 中的敏感位点和故障机制。通过离子辐照和随后的各向异性蚀刻引入损伤，产生了硅纳米线成功地使用SII在纳米改性硅表面观察到增强的金镀层。肖特基势垒I-V特性的温度依赖性表明，由于金属上的费米能级位置，离子辐照引入的Si近表面损伤降低了肖特基势垒高度-半导体界面。通过正电子湮没技术研究了离子注入引起的缺陷，并明确了其深度轮廓与离子种类之间的关系。对于下一阶段的强正电子束，采用了高效正电子慢化剂与使用^<60>C 源代码一起开发。目前已获得保证千倍高效减速的结果。利用分子轨道计算阐明了硅表面的氧化、H_2脱附和碱金属吸附过程。沿着 7x7 形成步骤的能量变化以及氧原子的影响进行了计算。使用高温 STM 在原位精确观察了 DAS 域的动态生长步骤。以单个堆垛层错三角形作为构建单元，孤立的 DAS 域成核或湮灭并揭示了生长的临界核尺寸。