Study of the thermal oxidation reaction dynamics on strain-controlled Si surfaces

应变控制硅表面热氧化反应动力学研究

• 批准号: 16360015
• 负责人: TAKAKUWA Yuji
• 金额: $ 7.68万
• 依托单位: Tohoku University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2004
• 资助国家: 日本
• 起止时间: 2004 至 2005
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-16360015/
• 关键词: lattice strain; Si thermal oxidation; reaction dynamics; RHEED-AES; real-time monitoring; point defect generation; rate-limiting reaction; gate insulator film; Si原子放出; ゲート酸化膜

To control in an atomic scale the gate insulator film of advanced strained-Si MOSFET devices, the thermal oxidation reaction dynamics on strain-controlled Si surfaces was investigated by UPS and RHEED combined with AES, and an oxidation reaction model mediated by the point defect generation (emitted Si atom + vacancy) due to the strain at SiO_2/Si interfaces was developed in this research.(1) The second oxide layer hardly grows after the two-dimensional oxide island growth with SiO desorption above 〜630℃, while it can growth gradually following the Langmuir-type adsorption below 〜630℃, suggesting that the second oxide layer growth kinetics is strongly affected by the point defect generation associated with the first oxide layer growth.(2) The Si atom emission kinetics caused by the strain due to the volume expansion of oxidation is quantitatively clarified by measuring the 2×1/1×2 domain ratio as a function of the oxide coverage during Langmuir-type adsorption on a Si(001)2×1 surface.(3) The rate of second oxide layer growth after Langmuir-type adsorption has a good linear correlation with the rate of oxide decomposition during void nucleation, indicating that the rate-limiting reaction of the second oxide layer growth is strongly concerned with that of void nucleation.(4) The oxide coverage dependence of the band bending measured by UPS showed a similar tendency to that of the amount of emitted Si atom observed by RHEED-AES. The findings of (3) and (4) can be comprehensively interpreted in terms of the point defect generation.(5) On the Si(001)c(4×4)-C surface carbonized by ethylene, the sticking probability of O_2 and the surface migration of adsorbed oxygen are considerably influenced by the strain, indicating an important role of the strain of a substrate surface in the oxidation reaction.

为了在原子尺度上控制先进应变硅 MOSFET 器件的栅极绝缘膜，通过 UPS 和 RHEED 结合 AES 研究了应变控制硅表面的热氧化反应，并建立了由点缺陷产生介导的氧化反应模型（本研究提出了由于SiO_2/Si界面处的应变而产生的发射Si原子+空位的现象。(1)二维氧化岛生长后第二氧化层几乎不生长SiO在~630℃以上解吸，而在~630℃以下可以遵循Langmuir型吸附逐渐生长，这表明第二氧化层的生长动力学受到与第一氧化层生长相关的点缺陷产生的强烈影响。(2)通过测量氧化过程中氧化物覆盖率的函数 2×1/1×2 域比，定量阐明了由于氧化体积膨胀而产生的应变引起的 Si 原子发射动力学。 Si(001)2×1表面上的Langmuir型吸附。(3)Langmuir型吸附后第二氧化层的生长速率与空洞成核过程中氧化物分解的速率具有良好的线性相关性，表明速率-第二氧化物层生长的限制反应与空穴成核的限制反应密切相关。(4) UPS 测量的能带弯曲的氧化物覆盖率依赖性显示出与发射的 Si 量相似的趋势通过RHEED-AES观察到的原子可以从点缺陷的产生角度综合解释(3)和(4)的结果。(5)乙烯碳化的Si(001)c(4×4)-C表面。 ，O_2 的粘附概率和吸附氧的表面迁移受应变的影响很大，表明基底表面的应变在氧化反应中起着重要作用。

项目成果

Surface chemical reaction dynamics illuminated by high brilliance and high energy-resolution synchrotron radiation -in-situ photoemission spectroscopy for surface oxidation induced by supersonic O_2 molecular beams-

高亮度、高能量分辨率同步辐射照亮的表面化学反应动力学-超音速O_2分子束诱导表面氧化的原位光电子能谱-

• 发表时间: 2005
• 期刊: Journal of the Japanese Society for Synchrotron Radiation Research 18
• 作者: K.Fukutani;K.Niki;T.Ito;H.Tashiro;M.Matsumoto;M.Wilde;T.Okano;W.A.Dino;H.Kasai;S.Ogawa;S.Ogawa;高桑雄二;S.Ogawa et al.;S.Ogawa et al.;Y.Takakuwa et al.;高桑雄二;S.Ogawa;小川修一;S.Ogawa;高桑雄二;寺岡有殿;S.Ogawa et al.;Y.Takakuwa et al.;Y.Teraoka et al.
• 通讯作者: Y.Teraoka et al.

Temperature dependence of oxidation-induced changes of work function on Si(001)2×1surface studied by real-time ultraviolet photoelectron spectroscopy

实时紫外光电子能谱研究Si(001)2×1表面氧化引起功函数变化的温度依赖性

• 发表时间: 2005
• 期刊: Japanese Journal of Applied Physics Vol.44, No.33
• 作者: K.Fukutani;K.Niki;T.Ito;H.Tashiro;M.Matsumoto;M.Wilde;T.Okano;W.A.Dino;H.Kasai;S.Ogawa;S.Ogawa;高桑雄二;S.Ogawa et al.;S.Ogawa et al.;Y.Takakuwa et al.;高桑雄二;S.Ogawa;小川修一;S.Ogawa;高桑雄二;寺岡有殿;S.Ogawa et al.;Y.Takakuwa et al.;Y.Teraoka et al.;S.Ogawa
• 通讯作者: S.Ogawa

Growth kinetics of very thin oxide on Si and Ti surfaces studied by real-time surface analytical methods

通过实时表面分析方法研究 Si 和 Ti 表面上极薄氧化物的生长动力学

• 发表时间: 2006
• 期刊: Journal of Surface Analysis 13
• 作者: K.Fukutani;K.Niki;T.Ito;H.Tashiro;M.Matsumoto;M.Wilde;T.Okano;W.A.Dino;H.Kasai;S.Ogawa;S.Ogawa;高桑雄二;S.Ogawa et al.;S.Ogawa et al.;Y.Takakuwa et al.
• 通讯作者: Y.Takakuwa et al.

Temperature dependence of oxidation-induced changes of work function on Si(001)2×1 surface studied by real-time ultraviolet photoelectron spectroscopy

实时紫外光电子能谱研究Si(001)2×1表面氧化引起功函数变化的温度依赖性

• 发表时间: 2005
• 期刊: Japanese Journal of Applied Physics Vol.44, No.33
• 作者: K.Fukutani;K.Niki;T.Ito;H.Tashiro;M.Matsumoto;M.Wilde;T.Okano;W.A.Dino;H.Kasai;S.Ogawa;S.Ogawa;高桑雄二;S.Ogawa et al.;S.Ogawa et al.;Y.Takakuwa et al.;高桑雄二;S.Ogawa;小川修一;S.Ogawa
• 通讯作者: S.Ogawa

Si(001)表面酸化過程のリアルタイム光電子分光観察:仕事関数と界面電子状態

Si(001)表面氧化过程的实时光电子能谱观察：功函数和界面电子态

• 发表时间: 2006
• 期刊: 真空 (印刷中)
• 作者: K.Fukutani;K.Niki;T.Ito;H.Tashiro;M.Matsumoto;M.Wilde;T.Okano;W.A.Dino;H.Kasai;S.Ogawa;S.Ogawa;高桑雄二;S.Ogawa et al.;S.Ogawa et al.;Y.Takakuwa et al.;高桑雄二;S.Ogawa;小川修一
• 通讯作者: 小川修一