Height Control of Metallic Nanoislands by Quantum Confinement

通过量子限制控制金属纳米岛的高度

• 批准号: 15360018
• 负责人: HIRAYAMA Hiroyuki
• 金额: $ 9.22万
• 依托单位: Tokyo Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2003
• 资助国家: 日本
• 起止时间: 2003 至 2005
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-15360018/
• 关键词: quantum confinement; surfaces & interfaces; nanostructures; optical second harmonic generation; scanning tunneling microscope; surface electronic states; ナノ島; 銀; シリコン表面; 光第二高調波発

We studied the nucleation of flat-top, nano Ag islands of a uniform height at clean Si(111)7x7 and H-terminated Si(111) surfaces. At these surfaces, Ag islands of atomically flat-top grow. In the Ag islands, the sp-band electrons are confined along surface normal direction, between the Ag island surface and Ag/Si interface to reveal quantum well states. In this study, we elucidated the relation between the height and the quantized electronic states of the confined electrons along surface normal direction using optical second harmonic generation (SHG) intensity oscillation and scanning tunneling microscope (STM)/ scanning tunneling spectroscopy (STS). We also calculated the quantum well states numerically by two-band model. The calculation agreed well with the experimental results.

我们研究了在干净的 Si(111)7x7 和 H 封端的 Si(111) 表面上高度均匀的平顶纳米银岛的成核。在这些表面上，原子级平顶的银岛生长。在Ag岛中，sp带电子被限制在Ag岛表面和Ag/Si界面之间的表面法线方向上，以揭示量子阱态。在这项研究中，我们利用光学二次谐波发生（SHG）强度振荡和扫描隧道显微镜（STM）/扫描隧道光谱（STS）阐明了沿表面法线方向受限电子的高度与量子化电子态之间的关系。我们还通过二能带模型数值计算了量子阱态。计算结果与实验结果吻合良好。

项目成果

Confinement of One-Dimensional Electrons in Dimer Row Segments at Ge/Si(001) Surfaces

Ge/Si(001) 表面二聚体行段中一维电子的限制

• 发表时间: 2004
• 期刊: Science & Technology of Advanced Materials 5
• 作者: H.Hirayama;M.Watai;H.Hirayama
• 通讯作者: H.Hirayama

H.Hirayama, A.Yamazaki, T.Kawata: "Changes of optical second harmonic generation intensity during Ag deposition on Si(111)7x7 and Si(111)√3x√3-AG surfaces"Surface Science. 532-535. 922-927 (2003)

H. Hirayama、A. Yamazaki、T. Kawata：“Si(111)7x7 和 Si(111)√3x√3-AG 表面上银沉积过程中光学二次谐波产生强度的变化”表面科学 532-532。 -927 (2003)

Resonant Optical Second Harmonic Generation From Quantum Well states in Ag Films on Si(111)7x7 Surfaces

Si(111)7x7 表面银薄膜中量子阱态的谐振光学二次谐波产生

• 发表时间: 2005
• 期刊: Physical Review B 72
• 作者: M.Watai;H.Hirayama
• 通讯作者: H.Hirayama

Resonant optical second-harmonic generation from Quantum well states in Ag films on Si(111)7x7 surfaces

Si(111)7x7 表面 Ag 薄膜中量子阱态产生谐振光学二次谐波

• 发表时间: 2005
• 期刊: Physical Review B72
• 作者: M.Watai;H.Hirayama
• 通讯作者: H.Hirayama

H.Hirayama: "Confinement of One-Dimensional Electrons in Dimer Row Segments at Ge/Si(001) Surfaces"Science & Technology of Advanced Materials. 5(印刷中). (2004)

H. Hirayama：“Ge/Si(001) 表面二聚体行段中的一维电子的限制”《先进材料科学与技术》5（出版中）。