In-situ investigation of organic devices by using infrared spectroscopy and photoelectron analysis

利用红外光谱和光电子分析对有机器件进行原位研究

• 批准号: 15350075
• 负责人: ISHII Hisao
• 金额: $ 8.58万
• 依托单位: Tohoku University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2003
• 资助国家: 日本
• 起止时间: 2003 至 2005
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-15350075/
• 关键词: organic semiconductor; infrared spectroscopy; organic transistor; photoinduced doping; displacement current measurement; photoelectron yield spectroscopy; ionization potential; 有機メモリ; ドーピング; 酸素; 変位電流評価法

In this study, we have investigated organic devices by combing spectroscopic methods and electric measurement. As the former, infrared reflection absorption spectroscopy in the multiple reflection geometry (MIR-IRAS) and photoelelctron yield spectroscopy (PYS) were applied, and as the latter, displacement current measurement (DCM) was used.We have applied DCM technique to various organic devices such as organic transistor, organic electroluminescent devices, and organic bistable devices. Then we found that this technique can give us useful information about the behavior of carrier in organic devices such as carrier injection, accumulation, amount of traps, and spatial distribution of accumulated charge. Concerning organic transisotr, we found that impurity doping to organic semiconductor is enhanced by visible light illumination and proposed a new doping method of "photoinduced doping". MIR-IRAS measurement of pentacene and polythiophene film revealed that the mechanism of the photoinduced doping is the acceleration of charge transfer between host organic semiconductor and guest impurity dopant through photoinduced charge transfer.We developed an apparatus with which photoelectron yield spectroscopy can be measured both in vacuum and atmospheric conditions. Due to purging the inside of a UV monochromatic light source by nitrogen, a wide range of photon energy (4-9eV) is available to cover most organic materials. We also demonstrated that PYS technique can be used to analyze electronic structures of organic/metal interface. Under our advice, very recently, a commercial apparatus for measuring ionization potential of OLED materials have been developed by a Japanese company.

在这项研究中，我们通过梳理光谱方法和电测量来研究有机设备。与前者一样，应用了多个反射几何（miR-iras）和光纤维传递屈服光谱（PYS）中的红外反射吸收光谱，并且在后者时，使用了位移电流测量（DCM）。我们已将DCM技术应用于各种有机的DCM技术诸如有机晶体管，有机电发光设备和有机双轴设备之类的设备。然后，我们发现该技术可以为我们提供有关载体在有机设备（例如载体注入，积累，陷阱量和累积电荷空间分布）中行为的有用信息。关于有机跨索的，我们发现可见光照明可以增强对有机半导体的杂质掺杂，并提出了一种新的“光诱导掺杂”的兴奋剂方法。五苯和聚噻吩膜的miR-iras测量表明，光诱导的掺杂的机理是宿主有机半导体和宾客杂质掺杂剂之间的电荷转移的加速。真空和大气条件。由于氮通过氮的内部清除了单色光源的内部，因此可以使用广泛的光子能（4-9EV）来覆盖大多数有机材料。我们还证明了PYS技术可用于分析有机/金属界面的电子结构。在我们的建议下，最近，一家日本公司开发了一种用于测量OLED材料电离潜力的商业设备。

项目成果

Adsorption of cata-condensed aromatics on a Si(100)-2×1 surface investigated by infrared absorption spectroscopy

红外吸收光谱研究催化稠合芳烃在 Si(100)-2×1 表面的吸附

• 发表时间: 2004
• 期刊: Applied Surface Science 237
• 作者: N.Abiko;S.Ogawa;Naofumi Abiko;Satoshi Ogawa;N.Abiko;S.Ogawa;T.Nishikawa;S.Ogawa;Koshi Okamura;石井 久夫;H.Ishii;S.Ogawa;Y.Hosoi;T.Nishikawa;K.Okamura;H.Ishii;H.Ishii;S.Ogawa;S.Ogawa;H.Ishii;石井 久夫;Koshi Okamura;石井 久夫;小川 賢;H.Ishii;K.Sugi;K.Okamura;H.Ishii;S.Ogawa;H.Ishii;K.Sugi;K.Okamura;K.Okamura
• 通讯作者: K.Okamura

K.Sugi: "Spontaneous Orientation of Alq3 Molecule in Evaporated Film and Its Vanishment by Light Irradiation"Mat.Res.Soc.Symp.Proc.. 771. L.7.9.1-L.7.9.6 (2003)

K.Sugi：“蒸发膜中 Alq3 分子的自发取向及其通过光照射消失”Mat.Res.Soc.Symp.Proc.. 771. L.7.9.1-L.7.9.6 (2003)

有機分子エレクトロニクスのための金属・分子界面の電子構造

有机分子电子学金属-分子界面的电子结构

• 发表时间: 2005
• 期刊: 固体物理 40巻6号
• 作者: N.Abiko;S.Ogawa;Naofumi Abiko;Satoshi Ogawa;N.Abiko;S.Ogawa;T.Nishikawa;S.Ogawa;Koshi Okamura;石井 久夫
• 通讯作者: 石井 久夫

Displacement Current Measurement as a Tool to Characterize Organic Field Effect Transistors

位移电流测量作为表征有机场效应晶体管的工具

• 发表时间: 2005
• 期刊: Synth.Met. 153
• 作者: Ogawa Y.;et al.;K.Ueno;S.Ogawa
• 通讯作者: S.Ogawa

Ambipolar operation of fullerene field-effect transistors by semiconductor/metal interface modification

• DOI: 10.1063/1.1903109
• 发表时间: 2005-05
• 期刊: Journal of Applied Physics
• 影响因子: 3.2
• 作者: T. Nishikawa;S. Kobayashi;Tomoyuki Nakanowatari;T. Mitani;T. Shimoda;Y. Kubozono;G. Yamamoto;H. Ishii;M. Niwano;Y. Iwasa