Fundamental Research on Ionized Cluster Beam Processes

电离簇束过程的基础研究

• 批准号: 03044082
• 负责人: YAMADA Isao
• 金额: $ 6.08万
• 依托单位: Kyoto University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for international Scientific Research
• 财政年份: 1991
• 资助国家: 日本
• 起止时间: 1991 至 1992
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-03044082/
• 关键词: International Exchange; Joint Research; Ionized Cluster Beam; Gas Cluster; Film Formation; Shallow Implantation; Clean Surface Formation; Atomically Flat Surface; クラスタ-; クラスタ-イオンビ-ム; エキシマレ-ザ-; 薄膜形成; 配列制御; エピタキシャル成長; 走査トンネル顕微鏡

We have been doing Joint Research with AT & T Bell Laboratories, New Jersey Institute of Technology, and University of Ryode Island for Fundamental Research on Ionized Cluster Beam (ICB) Processes by Grant under The Monbusho International Scientific Research Program. The investigations of ICB processes by these groups could provide important and useful results to each group.The experimental results obtained during the research term;namely (1) atomic-scale observations by Scanning Tunneling Microscopy (STM) of the early stages of film growth, and (2) recent studies of the detailed composition of beams from ICB sources, have led to a new understanding of the origins of the extraordinary properties of thin films deposited by ICB methods. The presence of a small fraction of atoms is the form large clusters initiates a novel sequence of film growth steps staring with the immediate formation of stable islands for film growth.In addition, a gas cluster ion source was newly developed and clusters with the size range of several hundreds to thousands of molecules were generated with this apparatus. For impacts with large clusters, We observed unique properties of the materials modified by the implantation, sputtering, and cleaning processes. These results can be applied to the development of new technologies for surface treatment.

我们一直与 AT&T 贝尔实验室、新泽西理工学院和 Ryode 岛大学进行联合研究，在 Monbusho 国际科学研究计划的资助下进行电离簇束 (ICB) 过程的基础研究。这些小组对ICB过程的研究可以为每个小组提供重要且有用的结果。在研究期间获得的实验结果；即（1）通过扫描隧道显微镜（STM）对薄膜生长的早期阶段进行原子尺度观察， (2) 最近对 ICB 源光束的详细组成的研究，使人们对 ICB 方法沉积的薄膜的非凡特性的起源有了新的认识。一小部分原子的存在是大团簇的形式，启动了一系列新颖的薄膜生长步骤，首先是立即形成用于薄膜生长的稳定岛。此外，新开发了气体团簇离子源，团簇的尺寸范围该装置产生了数百至数千个分子。对于大团簇的影响，我们观察到通过注入、溅射和清洁工艺改性的材料的独特性能。这些成果可应用于表面处理新技术的开发。