Development of a Heterojunction Structure Detector in the Submillimeter Wave Region

亚毫米波异质结结构探测器的研制

基本信息

批准号：
13650389
负责人：
SUZUKI Tetsu
金额：
$ 1.66万
依托单位：
Sendai National College of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2001
资助国家：
日本
起止时间：
2001 至 2002
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-13650389/
关键词：
millimeter wave heretojunction HBT structure detector model experiment AlGaAs GaAs ECR plasma etching device lifetime 化学選択エッチングマイクロ波

项目摘要

A Heterojunction Bipolar Transistor (HBT) structure detector has been studied as a new type detector/mixer in the millimeter (MM) and submillimeter (SMM) wave region. The detector may have much higher sensitivity compared to the Schottky Barrier Diode in the frequency range from 100GHz to THz.Primarily, we have studied the HBT detector as a theoretical simulation and a model experiment using a Si bipolar transistor in the microwave region. The result has suggested a feasibility of special design of the emitter, base, and collector structure for MM and SMM wave detector/mixers.We designed and fabricated the emitter-base structure using AlAs/GaAs heterojunction first, and have obtained good I-V characteristics successfully. Next, we started to design and fabricate base-collector structure. However, selective wet etching process of collector was not easy to obtain precise etching profile, and we could not observe good collector current versus collector-emitter voltage influenced by large leakage current. As a new fabrication process, an ECR plasma etching has been introduced to improve it. The leakage current was reduced a little, but it was not enough to operate as a transistor. Another problem of device lifetime appeared when the collector current applied up to several tens mA.A reduced area base structure could be necessary taking into account of the base current density to improve such problems. Now we are going on redesigning the base structure and fabrication of the HBT detector device.

在毫米（MM）和亚毫米计（SMM）波区域中，已经研究了杂结型双极晶体管（HBT）结构检测器。与从100GHz到THZ的频率范围内的Schottky屏障二极管相比，检测器的灵敏度可能更高。我们主要研究了HBT检测器作为理论模拟，并且使用微波区域中的SI双极晶体管进行了模型实验。结果表明，MM和SMM波检测器/混合器的发射极，基础和收集器结构的特殊设计可行性。我们首先使用Alas/GAAS Onterojunction设计和制造了发射极基碱结构，并成功获得了良好的I-V特性。接下来，我们开始设计和制造基础接收器结构。但是，收集器的选择性湿蚀刻过程并不容易获得精确的蚀刻曲线，并且我们无法观察到受大泄漏电流影响的良好的收集器电流与收集器发射器电压。作为一个新的制造过程，已经引入了ECR等离子体蚀刻以改进它。泄漏电流减少了一点，但不足以作为晶体管运行。当施加多达数十个MA的收集器电流时，就出现了设备寿命的另一个问题。现在，我们正在重新设计HBT检测器设备的基础结构和制造。